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QM3092M6-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownQM3092M6-VB
VBsemi Elec · MOSFETs · DFN5x6-8
QM3092M6-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (pin 1 marked with a dot); drain-source rated 30 V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, tied with the other source pins. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, tied with the other source pins. |
| 4 | G | input | Gate terminal; gate-source voltage limit is ±20 V. |
| 5 | D | passive | Drain terminal; continuous drain current 120 A at TC = 25 °C (package limit 80 A). |
| 6 | D | passive | Drain terminal, tied with the other drain pins; VDS maximum 30 V. |
| 7 | D | passive | Drain terminal, tied with the other drain pins; VDS maximum 30 V. |
| 8 | D | passive | Drain terminal, tied with the other drain pins; VDS maximum 30 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 30 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1 | 2.5 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (TJ = 55 °C) | IDSS | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 80 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.005 | Ω | VGS = 4.5 V, ID = 29 A | 2 | ||
| Forward Transconductance | gfs | 130 | S | VDS = 15 V, ID = 32 A | 2 | ||
| Gate Resistance | Rg | 1.4 | 2.1 | Ω | f = 1 MHz | 2 | |
| Turn-On Delay Time | td(on) | 18 | 27 | ns | VDD = 15 V, RL = 0.555 Ω, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 11 | 17 | ns | VDD = 15 V, RL = 0.555 Ω, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 70 | 105 | ns | VDD = 15 V, RL = 0.555 Ω, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 10 | 15 | ns | VDD = 15 V, RL = 0.555 Ω, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time | td(on) | 55 | 83 | ns | VDD = 15 V, RL = 0.625 Ω, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 180 | 270 | ns | VDD = 15 V, RL = 0.625 Ω, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 55 | 83 | ns | VDD = 15 V, RL = 0.625 Ω, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 12 | 18 | ns | VDD = 15 V, RL = 0.625 Ω, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Continuous Source-Drain Diode Current | IS | 80 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | 100 | A | 2 | |||
| Body Diode Voltage | VSD | 0.8 | 1.2 | V | IS = 22 A | 2 | |
| Body Diode Reverse Recovery Time | trr | 52 | 78 | ns | IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 70.2 | 105 | nC | IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Drain-Source Voltage | VDS | 30 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Continuous Drain Current | ID | 120 | A | TC = 25 °C, TJ = 175 °C | 1 | ||
| Continuous Drain Current | ID | 90 | A | TC = 70 °C, TJ = 175 °C | 1 | ||
| Pulsed Drain Current | IDM | 250 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | 80 | A | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 210 | W | TC = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 41 | 50 | °C/W | t ≤ 10 s, surface mounted on 1" x 1" FR4 board | 1 | |
| VDS Temperature Coefficient | ΔVDS/TJ | 35 | mV/°C | ID = 250 µA | 2 | ||
| VGS(th) Temperature Coefficient | ΔVGS(th)/TJ | -5.5 | mV/°C | ID = 250 µA | 2 |
CAD (KiCad official)
- Symbol:
QM3092M6-VB - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files:
qm3092m6-vb-etched.step/qm3092m6-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);qm3092m6-vb.step/qm3092m6-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
e14bf93a96cec8fc, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).