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QM3003J-VB
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VBsemi Elec MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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QM3003J-VB
VBsemi Elec · MOSFETs · SOT-89
QM3003J-VB from VBsemi Elec, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, rated for a gate-source voltage of ±20 V. |
| 2 | D | passive | Drain of the P-channel MOSFET, rated for a drain-source voltage of -30 V and a continuous drain current of -7.6 A at TC = 25 °C (package limited). |
| 3 | S | passive | Source of the P-channel MOSFET, with a continuous source-drain diode current of -3.5 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-89 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Continuous Drain Current | ID | -7.6 | A | TJ = 150 °C, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | -5.8 | A | TJ = 150 °C, TC = 70 °C | 1 | ||
| Pulsed Drain Current | IDM | -35 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | -3.5 | A | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 6.5 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 2.5 | W | TA = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 40 | 50 | °C/W | t ≤ 10 s | 1 | |
| Junction-to-Foot Thermal Resistance | RthJF | 24 | 30 | °C/W | Steady State | 1 | |
| Drain-Source Breakdown Voltage | VDS | -30 | V | VGS = 0 V, ID = - 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -2.5 | -1 | V | VDS = VGS, ID = - 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = - 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | µA | VDS = - 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | -20 | A | VDS ≤ - 5 V, VGS = - 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.056 | Ω | VGS = - 4.5 V, ID = - 5.6 A | 2 | ||
| Forward Transconductance | gfs | 18 | S | VDS = - 15 V, ID = - 7.0 A | 2 | ||
| Total Gate Charge | Qg | 25 | 38 | nC | VDS = - 15 V, VGS = - 10 V, ID = - 7.0 A | 2 | |
| Total Gate Charge | Qg | 13 | 20 | nC | VDS = - 15 V, VGS = - 4.5 V, ID = - 7.0 A | 2 | |
| Gate Resistance | Rg | 0.4 | 2 | 4 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 10 | 20 | ns | VDD = - 15 V, RL = 2.7 Ω, ID ≅ - 5.6 A, VGEN = - 10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 13 | 20 | ns | VDD = - 15 V, RL = 2.7 Ω, ID ≅ - 5.6 A, VGEN = - 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 23 | 35 | ns | VDD = - 15 V, RL = 2.7 Ω, ID ≅ - 5.6 A, VGEN = - 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 9 | 18 | ns | VDD = - 15 V, RL = 2.7 Ω, ID ≅ - 5.6 A, VGEN = - 10 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time | td(on) | 38 | 57 | ns | VDD = - 15 V, RL = 2.7 Ω, ID ≅ - 5.6 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 89 | 134 | ns | VDD = - 15 V, RL = 2.7 Ω, ID ≅ - 5.6 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 22 | 33 | ns | VDD = - 15 V, RL = 2.7 Ω, ID ≅ - 5.6 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 11 | 17 | ns | VDD = - 15 V, RL = 2.7 Ω, ID ≅ - 5.6 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Body Diode Voltage | VSD | -0.71 | -1.2 | V | IS = - 5.6 A, VGS = 0 V | 2 | |
| Body Diode Reverse Recovery Time | trr | 22 | 33 | ns | IF = - 5.6 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 17 | 26 | nC | IF = - 5.6 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Gate-Source Charge | Qgs | 3.5 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 5.5 | nC | 2 |
CAD (KiCad official)
- Symbol:
QM3003J-VB - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
qm3003j-vb-etched.step/qm3003j-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);qm3003j-vb.step/qm3003j-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
7c6dfae7b0d77224, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# QM3003J-VB
**VBsemi Elec** · MOSFETs · SOT-89
QM3003J-VB from VBsemi Elec, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, rated for a gate-source voltage of ±20 V. |
| 2 | D | passive | Drain of the P-channel MOSFET, rated for a drain-source voltage of -30 V and a continuous drain current of -7.6 A at TC = 25 °C (package limited). |
| 3 | S | passive | Source of the P-channel MOSFET, with a continuous source-drain diode current of -3.5 A at TC = 25 °C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-89 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -30 | V | TA = 25 °C | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TA = 25 °C | 1 |
| Continuous Drain Current | ID | | | -7.6 | A | TJ = 150 °C, TC = 25 °C | 1 |
| Continuous Drain Current | ID | | | -5.8 | A | TJ = 150 °C, TC = 70 °C | 1 |
| Pulsed Drain Current | IDM | | | -35 | A | | 1 |
| Continuous Source-Drain Diode Current | IS | | | -3.5 | A | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 6.5 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 2.5 | W | TA = 25 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Junction-to-Ambient Thermal Resistance | RthJA | | 40 | 50 | °C/W | t ≤ 10 s | 1 |
| Junction-to-Foot Thermal Resistance | RthJF | | 24 | 30 | °C/W | Steady State | 1 |
| Drain-Source Breakdown Voltage | VDS | -30 | | | V | VGS = 0 V, ID = - 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -2.5 | | -1 | V | VDS = VGS, ID = - 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS = - 30 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -5 | µA | VDS = - 30 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | -20 | | | A | VDS ≤ - 5 V, VGS = - 10 V | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.056 | Ω | VGS = - 4.5 V, ID = - 5.6 A | 2 |
| Forward Transconductance | gfs | | 18 | | S | VDS = - 15 V, ID = - 7.0 A | 2 |
| Total Gate Charge | Qg | | 25 | 38 | nC | VDS = - 15 V, VGS = - 10 V, ID = - 7.0 A | 2 |
| Total Gate Charge | Qg | | 13 | 20 | nC | VDS = - 15 V, VGS = - 4.5 V, ID = - 7.0 A | 2 |
| Gate Resistance | Rg | 0.4 | 2 | 4 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | | 10 | 20 | ns | VDD = - 15 V, RL = 2.7 Ω, ID ≅ - 5.6 A, VGEN = - 10 V, Rg = 1 Ω | 2 |
| Rise Time | tr | | 13 | 20 | ns | VDD = - 15 V, RL = 2.7 Ω, ID ≅ - 5.6 A, VGEN = - 10 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 23 | 35 | ns | VDD = - 15 V, RL = 2.7 Ω, ID ≅ - 5.6 A, VGEN = - 10 V, Rg = 1 Ω | 2 |
| Fall Time | tf | | 9 | 18 | ns | VDD = - 15 V, RL = 2.7 Ω, ID ≅ - 5.6 A, VGEN = - 10 V, Rg = 1 Ω | 2 |
| Turn-On Delay Time | td(on) | | 38 | 57 | ns | VDD = - 15 V, RL = 2.7 Ω, ID ≅ - 5.6 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 |
| Rise Time | tr | | 89 | 134 | ns | VDD = - 15 V, RL = 2.7 Ω, ID ≅ - 5.6 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 22 | 33 | ns | VDD = - 15 V, RL = 2.7 Ω, ID ≅ - 5.6 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 |
| Fall Time | tf | | 11 | 17 | ns | VDD = - 15 V, RL = 2.7 Ω, ID ≅ - 5.6 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 |
| Body Diode Voltage | VSD | | -0.71 | -1.2 | V | IS = - 5.6 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr | | 22 | 33 | ns | IF = - 5.6 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 17 | 26 | nC | IF = - 5.6 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Gate-Source Charge | Qgs | | 3.5 | | nC | | 2 |
| Gate-Drain Charge | Qgd | | 5.5 | | nC | | 2 |
## CAD (KiCad official)
- Symbol: `QM3003J-VB`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `qm3003j-vb-etched.step` / `qm3003j-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `qm3003j-vb.step` / `qm3003j-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/qm3003j-vb-datasheet.pdf) (8 pp, sha256 `7c6dfae7b0d77224`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/qm3003j-vb-datasheet.pdf)