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Contents

README

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QCFJ-3439T-500UE

Broadcom/AVAGO · Transistor Output Optocoupler · SO-24

QCFJ-3439T-500UE from Broadcom/AVAGO, in a SO-24. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VEE1 power_in Input ground.
2 /UVLO output VCC1 under voltage feedback and VCC2 under voltage lock-out feedback.
3 /FAULT output Desaturation fault feedback.
4 /GFAULT output IGBT/MOSFET gate status feedback.
5 DNC unconnected Do not connect; internally this pin is connected to the VEE1 lead frame.
6 VCC1 power_in Input positive power supply.
7 NC unconnected No connection.
8 DNC unconnected Do not connect; internally connected to the input LED cathode lead frame.
9 AN input Input LED anode.
10 DNC unconnected Do not connect; internally connected to the input LED anode lead frame.
11 CA input Input LED cathode.
12 NC unconnected No connection.
13 VE power_in IGBT emitter/MOSFET source reference.
14 VEE2 power_in Output negative power supply.
15 VEE2 power_in Output negative power supply.
16 VOUTN output Output driver to turn off the IGBT/MOSFET gate.
17 VOUTP/CLAMP output Output driver to turn on the IGBT/MOSFET gate and Miller current clamping output.
18 VCC2 power_in Output positive power supply.
19 SSD output Soft shutdown output driver.
20 DESAT input Desaturation protection sensing input.
21 DNC unconnected Do not connect; internally connected to the LED2+ lead frame.
22 LED2+(DNC) unconnected Do not connect, for testing only.
23 DNC unconnected Do not connect; internally connected to the VEE2 lead frame.
24 DNC unconnected Do not connect; internally connected to the VEE2 lead frame.

Key specifications

Parameter Value
Manufacturer Broadcom/AVAGO
Package SO-24
Category Optocoupler
Pins 24

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Storage Temperature TS -55 150 °C 7
Operating Temperature TA -40 125 °C 7
IC Junction Temperature TJ 150 °C 7
Average LED Input Current IF(AVG) 20 mA 7
Peak Transient LED Input Current IF(TRAN) 1 A <1-µs pulse width, 300 pps 7
LED Reverse Input Voltage VCA, VAN 6 V 7
Input Supply Voltage VCC1 -0.5 6 V Reference to VEE1 7
Total Output Supply Voltage VCC2 -0.5 30 V Reference to VEE2 7
Negative Output Supply Voltage VEE2, VE -15 0.5 V 7
Peak Output Current for VOUTP and VOUTN /IOUT(PEAK)/ 10 A Maximum pulse width=5 µs, maximum duty cycle=1% 7
Peak Miller Clamp Sinking Current ICLAMP(PEAK) 5 A Maximum pulse width=5 µs, maximum duty cycle=1% 7
Desat Discharge Current (Continuous) IDSCHG 12 mA 7
Output IC Power Dissipation PO 800 mW 7
Input IC Power Dissipation PI 150 mW 7
Operating Temperature TA -40 125 °C 8
Input IC Supply Voltage VCC1 4.5 5.5 V 8
Total Output IC Supply Voltage VCC2, VEE2 15 25 V 8
Positive Output IC Supply Voltage VCC2, VE 15 20 V 8
Negative Output IC Supply Voltage VEE2, VE -10 0 V 8
Input LED Turn-on Current IF(ON) 11 16 mA 8
Input LED Turn-off Voltage (VAN, VCA) VF(OFF) -5.5 0.8 V 8
Input LED Turn On Pulse Width Ton(LED) 100 ns 8
Input Supply Current ICC1 1 1.6 2.5 mA 9
Output High Supply Current ICC2H 4.5 6.6 8.6 mA IF = 11 mA, No load 9
Output Low Supply Current ICC2L 3.5 5.6 7.5 mA IF = 0 mA, No load 9
Output High VE Supply Current IEH -0.4 -0.7 -1.2 mA IF = 11 mA, No load 9
Output Low VE Supply Current IEL -0.4 -0.7 -1.2 mA IF = 0 mA, No load 9
VCC1 Under Voltage Turn On Threshold VUV1_TH+ 3.9 4.2 4.4 V 9
VCC1 Under Voltage Turn Off Threshold VUV1_TH- 3.6 3.9 4.1 V 9
VCC1 MOS Threshold VCC1_MOS_TH 0.5 1.4 1.7 V I/UVLO = 0.5 mA 9
LED Forward Voltage (VAN, VCA) VF 1.25 1.55 1.85 V IF = 11 mA 9
LED Reverse Breakdown Voltage (VCA, VAN) VBR 6 V IF = -10 µA 9
LED Turn On Current Threshold, Low to High ITH+ 2.4 7.5 mA 9
LED Turn On Current Threshold, High to Low ITH- 0.3 2.1 mA 9
/UVLO Logic Low Output Voltage V/UVLO_L 0.4 V I/UVLO = 4 mA 9
/UVLO Logic High Output Current I/UVLO_H 0.02 2 µA V/UVLO = 5V 9
/FAULT Logic Low Output Voltage V/FAULT_L 0.4 V I/FAULT = 4 mA 9
/FAULT Logic High Output Current I/FAULT_H 0.02 2 µA V/FAULT = 5V 9
/GFAULT Logic Low Output Voltage V/GFAULT_L 0.4 V I/GFAULT = 4 mA 9
/GFAULT Logic High Output Current I/GFAULT_H 0.02 2 µA V/GFAULT = 5V 10
VOUTN Low Level Voltage VOUTN_L 0.01 0.03 0.1 V IO = 100 mA 10
VOUTP High Level Peak Sourcing Current IOUTP(PEAK) -16 -10 A VOUTP = VCC2, 15V 10
VOUTN Low Level Peak Sinking Current IOUTN(PEAK) 10 17 A VOUTN = VEE2 + 15V 10
VOUTP Output PMOS RDS(ON) ROUTP 0.1 0.5 1.5 Ω IO = -100 mA 10
VOUTN Output NMOS RDS(ON) ROUTN 0.1 0.3 1 Ω IO = 100 mA 10
Low Level SSD Voltage VSSD 0.01 0.04 0.5 V ISSD = 40 mA 10
Low Level SSD Current ISSD 1 A VSSD = 10V 10
VIN to High Level VOUTP Propagation Delay Time tPLH 98 140 ns VIN = 5V, RLED = 260Ω, Rg_on = 2.2Ω, Rg_off = 2.2Ω, Cload = 2.2 nF, f = 10 kHz, Duty cycle = 50% 10
VIN to Low Level VOUTN Propagation Delay Time tPHL 95 140 ns VIN = 5V, RLED = 260Ω, Rg_on = 2.2Ω, Rg_off = 2.2Ω, Cload = 2.2 nF, f = 10 kHz, Duty cycle = 50% 10
Pulse Width Distortion PWD -60 60 ns 10
Dead Time Distortion (tPLH, tPHL) DTD -60 60 ns 10
Output High Level Common Mode Transient Immunity /CMH/ 100 kV/µs TA = 25°C, VCM = 1000V 10
Output Low Level Common Mode Transient Immunity /CML/ 100 kV/µs TA = 25°C, VCM = 1000V 10
Clamp Threshold Voltage VMC_TH 1.5 2 2.5 V 10
Clamp Low Level Sinking Current ICLAMP 1 2.5 A VCLAMP = VEE2 + 2.5V 10
Clamp Low Level Peak Sinking Current ICLAMP(PEAK) 2.5 4 A VCLAMP = VEE2 + 10V 10
VCC2 UVLO Threshold Low to High VUVLO2_TH+ 11.25 12.9 13.75 V VOUTP, VE > 5V 10
VCC2 UVLO Threshold High to Low VUVLO2_TH- 10.35 11.8 12.65 V VOUTP, VE < 5V 10
VCC2 UVLO Hysteresis VUVLO2_HYS 0.9 1.1 1.3 V 10
Input-Output Momentary Withstand Voltage VISO 5000 VRMS RH < 50%, t = 1 minute, TA = 25°C 12

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper (pin 1) and the bypass capacitor locally to these planes through multiple via holes. For thermal dissipation purposes, it is recommended to place large copper area for top layer VEE2 (pins 14 and 15) 26

CAD (KiCad official)

  • Symbol: QCFJ-3439T-500UE
  • Footprint: Package_SO:SO-24_5.3x15mm_P1.27mm
  • 3D model: SO-24, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 1.75 mm nominal SOIC height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: qcfj-3439t-500ue-etched.step / qcfj-3439t-500ue-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); qcfj-3439t-500ue.step / qcfj-3439t-500ue.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Broadcom/AVAGO datasheet (27 pp, sha256 cdb732fece3f4a6b, retrieved 2026-10-24, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF