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Q6035NH5TP

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Littelfuse Thyristors (SCR)/Modules, TO-263. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.

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Q6035NH5TP

Littelfuse · Thyristors (SCR)/Modules · TO-263

Q6035NH5TP from Littelfuse, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 MT1 passive Main terminal 1, the reference for all gate polarities, on the left lead of the TO-263 drawing.
2 MT2 passive Main terminal 2 on the center position, which is a short stub on the drawing and is common with the MT2 mounting tab.
3 GATE input Gate trigger input on the right lead with IGT max 50 mA (Q1-Q3) at VD = 12 V, RL = 30 Ω for the Qxx35NH5.

Key specifications

Parameter Value
Manufacturer Littelfuse
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
RMS on-state current (full sine wave), TC = 90°C IT(RMS) 35 A Qxx35NH5 column, TC = 90°C 2
Non repetitive surge peak on-state current ITSM 290 A f = 50 Hz, t = 20 ms, TJ initial = 25°C 2
Non repetitive surge peak on-state current ITSM 350 A f = 60 Hz, t = 16.7 ms, TJ initial = 25°C 2
I2t value for fusing I2t 508 A2s tp = 8.3 ms 2
Critical rate of rise of on-state current di/dt 100 A/μs IG = 200mA with ≤ 0.1µs rise time, f = 120 Hz, TJ = 125°C 2
Peak gate trigger current IGTM 4 A tp = 20μs, TJ = 125°C 2
Average gate power dissipation PG(AV) 0.5 W TJ = 125°C 2
Storage temperature range Tstg -40 125 °C 2
Operating junction temperature range TJ -25 125 °C 2
Gate trigger current IGT 50 mA VD = 12V, RL = 30 Ω, quadrants I-II-III, 35A device column 2
Gate trigger voltage VGT 2 V VD = 12V, RL = 30 Ω, quadrants I-II-III, 35A device column 2
Gate non-trigger voltage VGD 0.2 V VD = VDRM, RL = 3.3 kΩ, TJ = 125°C, quadrants I-II-III 2
Holding current IH 75 mA IT = 400mA, 35A device column 2
Critical rate of rise of off-state voltage dv/dt 400 V/μs VD = VDRM, gate open, TJ = 125°C, 600V rating, 35A device column 2
Critical rate of rise of commutating voltage (dv/dt)c 20 V/µs (di/dt)c = 18.9 A/ms, TJ = 125°C, 35A device column 2
Turn-on time tgt 3 µs IG = 2 x IGT, PW = 15µs, IT = 49.5A(pk), 35A device 2
On-state voltage VTM 1.5 V ITM = 49.5A, tp = 380 µs, 35A device 3
Peak off-state current IDRM/IRRM 10 µA VD = VDRM/VRRM, TJ = 25°C, 400-600V, Qxx35R/NH5 3
Peak off-state current IDRM/IRRM 2 mA VD = VDRM/VRRM, TJ = 125°C, 400-600V, Qxx35R/NH5 3
Junction to case (AC) thermal resistance Rθ(J-C) 0.85 °C/W Qxx35NH5 (AC) 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin Lead Bend MIL-STD-750, M-2036 Cond E Terminal Finish 100% Matte Tin-plated. 6

CAD (KiCad official)

  • Symbol: Q6035NH5TP
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: q6035nh5tp-etched.step / q6035nh5tp-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); q6035nh5tp.step / q6035nh5tp.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Littelfuse datasheet (8 pp, sha256 7314f1f7a8f8386e, retrieved 2026-10-21, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF