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PZTA29

Public Made by Adom

by adom

onsemi(安森美) Darlington Transistors, SOT-223-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PZTA29

onsemi(安森美) · Darlington Transistors · SOT-223-4

PZTA29 from onsemi(安森美), in a SOT-223-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base lead of the PZTA29 NPN Darlington, with the datasheet giving VEBO of 12 V and base drive test conditions of IB = 0.01 mA at IC = 10 mA and IB = 0.1 mA at IC = 100 mA for VCE(sat).
2 Collector passive Collector lead, one of two collector pins on the SOT-223 package, rated for VCES of 100 V and continuous collector current of 800 mA.
3 Emitter passive Emitter lead of the Darlington pair, with the datasheet giving an emitter-base breakdown voltage V(BR)EBO of 12 V minimum at IE = 10 µA.
4 Collector passive Collector lead, the second collector pin on the SOT-223 package, sharing the same 100 V VCES and 800 mA continuous collector current ratings as pin 2.

Key specifications

Parameter Value
Manufacturer onsemi(安森美)
Package SOT-223-4
Category Transistors/Thyristors
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCES 100 V 2
Collector-Base Voltage VCBO 100 V 2
Emitter-Base Voltage VEBO 12 V 2
Collector Current - Continuous IC 800 mA Continuous 2
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 °C 2
Collector-Emitter Breakdown Voltage V(BR)CES 100 V IC = 100µA, VBE = 0 2
Collector-Base Breakdown Voltage V(BR)CBO 100 V IC = 100µA, IE = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO 12 V IE = 10µA, IC = 0 2
Collector Cutoff Current ICBO 100 nA VCB = 80V, IE = 0 2
Collector Cutoff Current ICES 500 nA VCE = 80V, VBE = 0 2
Emitter Cut-off Current IEBO 100 nA VEB = 10V, IC = 0 2
DC Current Gain hFE 10000 VCE = 5.0V, IC = 10mA 2
Collector-Emitter Saturation Voltage VCE(sat) 1.2 V IC = 10mA, IB = 0.01mA 2
Collector-Emitter Saturation Voltage VCE(sat) 1.5 V IC = 100mA, IB = 0.1mA 2
Base-Emitter On Voltage VBE(on) 2 V IC = 100mA, VCE = 5.0V 2
Current Gain Bandwidth Product fT 125 MHz IC = 10mA, VCE = 5.0V, f = 100MHz 2
Output Capacitance Cobo 8 pF VCB = 1.0V, IE = 0, f = 1.0MHz 2
Total Device Dissipation PD 1000 mW Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for collector lead min. 6cm2 3
Derate above 25°C 8 mW/°C Derate above 25°C 3
Thermal Resistance, Junction to Ambient RθJA 125 °C/W Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for collector lead min. 6cm2 3

CAD (KiCad official)

  • Symbol: PZTA29
  • Footprint: Package_TO_SOT_SMD:SOT-223
  • 3D model: SOT-223-4 (KiCad packages3D, STEP)
  • 3D model files: pzta29-etched.step / pzta29-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pzta29.step / pzta29.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi(安森美) datasheet (6 pp, sha256 0be59742a6c4d914, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF