component

PZT5551G-B-AA3-R

Public Made by Adom

by adom

UTC Unisonic Tech Bipolar (BJT), SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorspzt5551g-b-aa3-rfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
pzt5551g-b-aa3-r / README.md
History Download
Ray Publish 0.1.0 9ce48ba 7d ago

PZT5551G-B-AA3-R

UTC Unisonic Tech · Bipolar (BJT) · SOT-223

PZT5551G-B-AA3-R from UTC Unisonic Tech, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal of the NPN transistor; emitter-base voltage is limited to VEBO 6 V and emitter-base breakdown is specified at BVEBO 6 V minimum.
2 C passive Collector terminal of the NPN transistor; limited to VCEO 160 V, VCBO 180 V and a DC collector current of 600 mA.
3 E passive Emitter terminal of the NPN transistor; the reference for the 6 V emitter-base limit (VEBO) and the 160 V collector-emitter rating.

Key specifications

Parameter Value
Manufacturer UTC Unisonic Tech
Package SOT-223
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 180 V 2
Collector-Emitter Voltage VCEO 160 V 2
Emitter-Base Voltage VEBO 6 V 2
DC Collector Current IC 600 mA 2
Power Dissipation PC 2 W 2
Operating Junction Temperature TJ 150 °C 2
Storage Temperature TSTG -65 150 °C 2
Junction to Ambient thermal resistance θJA 62.5 °C/W 2
Collector-Base Breakdown Voltage BVCBO 180 V IC=100μA, IE=0 2
Collector-Emitter Breakdown Voltage BVCEO 160 V IC=1mA, IB=0 2
Emitter-Base Breakdown Voltage BVEBO 6 V IE=10μA, IC=0 2
Collector Cut-off Current ICBO 50 nA VCB=120V, IE=0 2
Emitter Cut-off Current IEBO 50 nA VBE=4V, IC=0 2
DC Current Gain hFE 80 VCE=5V, IC=1mA 2
DC Current Gain hFE 80 160 400 VCE=5V, IC=10mA 2
DC Current Gain classification rank B hFE 150 240 2
Collector-Emitter Saturation Voltage VCE(SAT) 0.15 V IC=10mA, IB=1mA 2
Collector-Emitter Saturation Voltage VCE(SAT) 0.2 V IC=50mA, IB=5mA 2
Base-Emitter Saturation Voltage VBE(SAT) 1 V IC=10mA, IB=1mA 2
Current Gain Bandwidth Product fT 100 300 MHz VCE=10V, IC=10mA, f=100MHz 2
Output Capacitance Cob 6 pF VCB=10V, IE=0, f=1MHz 2
Noise Figure NF 8 dB IC=0.25mA, VCE=5V, RS=1kΩ, f=10Hz ~ 15.7kHz 2

CAD (KiCad official)

  • Symbol: PZT5551G-B-AA3-R
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT-223 (KiCad packages3D, STEP)
  • 3D model files: pzt5551g-b-aa3-r-etched.step / pzt5551g-b-aa3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pzt5551g-b-aa3-r.step / pzt5551g-b-aa3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC Unisonic Tech datasheet (4 pp, sha256 b7815fcf380da9df, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF