component
PZT4401
Public Made by Adomby adom
Changjing Bipolar (BJT), SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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PZT4401
Changjing · Bipolar (BJT) · SOT-223
PZT4401 from Changjing, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; the datasheet rates the emitter-base voltage VEBO at 6 V. |
| 2 | COLLECTOR | passive | Collector terminal of the NPN transistor; the datasheet rates VCBO at 60 V, VCEO at 40 V, and collector current IC at 600 mA. |
| 3 | EMITTER | passive | Emitter terminal of the NPN transistor; the datasheet rates the emitter-base voltage VEBO at 6 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-223 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 60 | V | IC=0.1mA,IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 40 | V | IC=1mA,IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V | IE=0.1mA,IC=0 | 1 | ||
| Collector cut-off current | ICBO | 50 | nA | VCB=60V,IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 50 | nA | VEB=6V, IC=0 | 1 | ||
| DC current gain | hFE(1) | 20 | VCE=1V, IC=0.1mA | 1 | |||
| DC current gain | hFE(2) | 40 | VCE=1V, IC=1mA | 1 | |||
| DC current gain | hFE(3) | 80 | VCE=1V, IC=10mA | 1 | |||
| DC current gain | hFE(4) | 100 | 300 | VCE=1V, IC=150mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.4 | V | IC=150mA,IB=15mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.75 | V | IC=500mA,IB=50mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 0.95 | V | IC=150mA,IB=15mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.2 | V | IC=500mA,IB=50mA | 1 | ||
| Transition frequency | fT | 250 | MHz | VCE=10V,IC=20mA, f=100MHz | 1 | ||
| Collector output capacitance | Cob | 8 | pF | VCB=5V, IE=0, f=1MHz | 1 | ||
| Emitter input capacitance | Cib | 30 | pF | VEB=0.5V, IC=0, f=1MHz | 1 | ||
| Collector-Base Voltage | VCBO | 60 | V | Ta=25℃ | 1 | ||
| Collector-Emitter Voltage | VCEO | 40 | V | Ta=25℃ | 1 | ||
| Emitter-Base Voltage | VEBO | 6 | V | Ta=25℃ | 1 | ||
| Collector Current | IC | 600 | mA | Ta=25℃ | 1 | ||
| Collector Power Dissipation | PC | 1 | W | Ta=25℃ | 1 | ||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance From Junction To Ambient | RθJA | 125 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
PZT4401 - Footprint:
Package_TO_SOT_SMD:SOT-223-3_TabPin2 - 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files:
pzt4401-etched.step/pzt4401-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pzt4401.step/pzt4401.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (4 pp, sha256
aeb9a6f6c48a6288, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PZT4401
**Changjing** · Bipolar (BJT) · SOT-223
PZT4401 from Changjing, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; the datasheet rates the emitter-base voltage VEBO at 6 V. |
| 2 | COLLECTOR | passive | Collector terminal of the NPN transistor; the datasheet rates VCBO at 60 V, VCEO at 40 V, and collector current IC at 600 mA. |
| 3 | EMITTER | passive | Emitter terminal of the NPN transistor; the datasheet rates the emitter-base voltage VEBO at 6 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-223 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 60 | | | V | IC=0.1mA,IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | 40 | | | V | IC=1mA,IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | 6 | | | V | IE=0.1mA,IC=0 | 1 |
| Collector cut-off current | ICBO | | | 50 | nA | VCB=60V,IE=0 | 1 |
| Emitter cut-off current | IEBO | | | 50 | nA | VEB=6V, IC=0 | 1 |
| DC current gain | hFE(1) | 20 | | | | VCE=1V, IC=0.1mA | 1 |
| DC current gain | hFE(2) | 40 | | | | VCE=1V, IC=1mA | 1 |
| DC current gain | hFE(3) | 80 | | | | VCE=1V, IC=10mA | 1 |
| DC current gain | hFE(4) | 100 | | 300 | | VCE=1V, IC=150mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) | | | 0.4 | V | IC=150mA,IB=15mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) | | | 0.75 | V | IC=500mA,IB=50mA | 1 |
| Base-emitter saturation voltage | VBE(sat) | | | 0.95 | V | IC=150mA,IB=15mA | 1 |
| Base-emitter saturation voltage | VBE(sat) | | | 1.2 | V | IC=500mA,IB=50mA | 1 |
| Transition frequency | fT | 250 | | | MHz | VCE=10V,IC=20mA, f=100MHz | 1 |
| Collector output capacitance | Cob | | | 8 | pF | VCB=5V, IE=0, f=1MHz | 1 |
| Emitter input capacitance | Cib | | | 30 | pF | VEB=0.5V, IC=0, f=1MHz | 1 |
| Collector-Base Voltage | VCBO | | | 60 | V | Ta=25℃ | 1 |
| Collector-Emitter Voltage | VCEO | | | 40 | V | Ta=25℃ | 1 |
| Emitter-Base Voltage | VEBO | | | 6 | V | Ta=25℃ | 1 |
| Collector Current | IC | | | 600 | mA | Ta=25℃ | 1 |
| Collector Power Dissipation | PC | | | 1 | W | Ta=25℃ | 1 |
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance From Junction To Ambient | RθJA | | | 125 | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `PZT4401`
- Footprint: `Package_TO_SOT_SMD:SOT-223-3_TabPin2`
- 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files: `pzt4401-etched.step` / `pzt4401-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pzt4401.step` / `pzt4401.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjing datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590919950485692416) (4 pp, sha256 `aeb9a6f6c48a6288`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/pzt4401-datasheet.pdf)