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PZT3906
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Changjiang Electronics Tech (CJ) Bipolar Transistors - BJT, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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PZT3906
Changjiang Electronics Tech (CJ) · Bipolar Transistors - BJT · SOT-223
PZT3906 from Changjiang Electronics Tech (CJ), in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base of the PNP transistor; emitter-base voltage limited to -5 V (VEBO) with VBE(sat) of -0.65 to -0.85 V at IC=-10 mA. |
| 2 | COLLECTOR | passive | Collector of the PNP transistor; rated VCBO -40 V, VCEO -40 V and continuous collector current -200 mA. |
| 3 | EMITTER | passive | Emitter of the PNP transistor; emitter-base breakdown V(BR)EBO is -5 V minimum at IE=0.01 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjiang Electronics Tech (CJ) |
| Package | SOT-223 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -40 | V | IC=-0.01mA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -40 | V | IC=-1mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=0.01mA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | -50 | nA | VCB=-30V, IE=0 | 1 | ||
| DC current gain | hFE(1) | 60 | VCE=-1V, IC=-0.1mA | 1 | |||
| DC current gain | hFE(2) | 80 | VCE=-1V, IC=-1mA | 1 | |||
| DC current gain | hFE(3) | 100 | 300 | VCE=-1V, IC=-10mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.25 | V | IC=-10mA, IB=-1mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.4 | V | IC=-50mA, IB=-5mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | -0.65 | -0.85 | V | IC=-10mA, IB=-1mA | 1 | |
| Base-emitter saturation voltage | VBE(sat) | -0.95 | V | IC=-50mA, IB=-5mA | 1 | ||
| Transition frequency | fT | 250 | MHz | VCE=-20V, IC=-10mA, f=100MHz | 1 | ||
| Collector output capacitance | Cob | 4.5 | pF | VCB=-5V, IE=0, f=1MHz | 1 | ||
| Emitter input capacitance | Cib | 10 | pF | VBE=-0.5V, IC=0, f=1MHz | 1 | ||
| Delay time | td | 35 | ns | VCC=-3V, VBE(off)=-0.5V, IC=-10mA, IB1=-IB2=-1mA | 1 | ||
| Rise time | tr | 35 | ns | VCC=-3V, VBE(off)=-0.5V, IC=-10mA, IB1=-IB2=-1mA | 1 | ||
| Storage time | ts | 225 | ns | VCC=-3V, IC=-10mA, IB1=-IB2=-1mA | 1 | ||
| Fall time | tf | 75 | ns | VCC=-3V, IC=-10mA, IB1=-IB2=-1mA | 1 | ||
| Collector-base voltage | VCBO | -40 | V | Ta=25℃ | 1 | ||
| Collector-emitter voltage | VCEO | -40 | V | Ta=25℃ | 1 | ||
| Emitter-base voltage | VEBO | -5 | V | Ta=25℃ | 1 | ||
| Collector current | IC | -200 | mA | Ta=25℃ | 1 | ||
| Collector power dissipation | PC | 1 | W | Ta=25℃ | 1 | ||
| Junction temperature | Tj | 150 | ℃ | Ta=25℃ | 1 | ||
| Storage temperature | Tstg | -55 | 150 | ℃ | Ta=25℃ | 1 | |
| Thermal resistance junction to ambient | RθJA | 125 | ℃/W | Ta=25℃ | 1 |
CAD (KiCad official)
- Symbol:
PZT3906 - Footprint:
Package_TO_SOT_SMD:SOT-223-3_TabPin2 - 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files:
pzt3906-etched.step/pzt3906-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pzt3906.step/pzt3906.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjiang Electronics Tech (CJ) datasheet (4 pp, sha256
59ac76a1022b3e63, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PZT3906
**Changjiang Electronics Tech (CJ)** · Bipolar Transistors - BJT · SOT-223
PZT3906 from Changjiang Electronics Tech (CJ), in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base of the PNP transistor; emitter-base voltage limited to -5 V (VEBO) with VBE(sat) of -0.65 to -0.85 V at IC=-10 mA. |
| 2 | COLLECTOR | passive | Collector of the PNP transistor; rated VCBO -40 V, VCEO -40 V and continuous collector current -200 mA. |
| 3 | EMITTER | passive | Emitter of the PNP transistor; emitter-base breakdown V(BR)EBO is -5 V minimum at IE=0.01 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjiang Electronics Tech (CJ) |
| Package | SOT-223 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -40 | | | V | IC=-0.01mA, IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | -40 | | | V | IC=-1mA, IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 | | | V | IE=0.01mA, IC=0 | 1 |
| Collector cut-off current | ICBO | | | -50 | nA | VCB=-30V, IE=0 | 1 |
| DC current gain | hFE(1) | 60 | | | | VCE=-1V, IC=-0.1mA | 1 |
| DC current gain | hFE(2) | 80 | | | | VCE=-1V, IC=-1mA | 1 |
| DC current gain | hFE(3) | 100 | | 300 | | VCE=-1V, IC=-10mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) | | | -0.25 | V | IC=-10mA, IB=-1mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) | | | -0.4 | V | IC=-50mA, IB=-5mA | 1 |
| Base-emitter saturation voltage | VBE(sat) | -0.65 | | -0.85 | V | IC=-10mA, IB=-1mA | 1 |
| Base-emitter saturation voltage | VBE(sat) | | | -0.95 | V | IC=-50mA, IB=-5mA | 1 |
| Transition frequency | fT | 250 | | | MHz | VCE=-20V, IC=-10mA, f=100MHz | 1 |
| Collector output capacitance | Cob | | | 4.5 | pF | VCB=-5V, IE=0, f=1MHz | 1 |
| Emitter input capacitance | Cib | | | 10 | pF | VBE=-0.5V, IC=0, f=1MHz | 1 |
| Delay time | td | | | 35 | ns | VCC=-3V, VBE(off)=-0.5V, IC=-10mA, IB1=-IB2=-1mA | 1 |
| Rise time | tr | | | 35 | ns | VCC=-3V, VBE(off)=-0.5V, IC=-10mA, IB1=-IB2=-1mA | 1 |
| Storage time | ts | | | 225 | ns | VCC=-3V, IC=-10mA, IB1=-IB2=-1mA | 1 |
| Fall time | tf | | | 75 | ns | VCC=-3V, IC=-10mA, IB1=-IB2=-1mA | 1 |
| Collector-base voltage | VCBO | | | -40 | V | Ta=25℃ | 1 |
| Collector-emitter voltage | VCEO | | | -40 | V | Ta=25℃ | 1 |
| Emitter-base voltage | VEBO | | | -5 | V | Ta=25℃ | 1 |
| Collector current | IC | | | -200 | mA | Ta=25℃ | 1 |
| Collector power dissipation | PC | | | 1 | W | Ta=25℃ | 1 |
| Junction temperature | Tj | | | 150 | ℃ | Ta=25℃ | 1 |
| Storage temperature | Tstg | -55 | | 150 | ℃ | Ta=25℃ | 1 |
| Thermal resistance junction to ambient | RθJA | | | 125 | ℃/W | Ta=25℃ | 1 |
## CAD (KiCad official)
- Symbol: `PZT3906`
- Footprint: `Package_TO_SOT_SMD:SOT-223-3_TabPin2`
- 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files: `pzt3906-etched.step` / `pzt3906-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pzt3906.step` / `pzt3906.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjiang Electronics Tech (CJ) datasheet](docs/pzt3906-datasheet.pdf) (4 pp, sha256 `59ac76a1022b3e63`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/pzt3906-datasheet.pdf)