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PZT1816G-S-AA3-R

Public Made by Adom

by adom

UTC Unisonic Tech Bipolar (BJT), SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Datasheet

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Contents

README

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PZT1816G-S-AA3-R

UTC Unisonic Tech · Bipolar (BJT) · SOT-223

PZT1816G-S-AA3-R from UTC Unisonic Tech, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal of the NPN transistor; the datasheet rates emitter-base voltage VEBO at 6 V, with BVEBO tested at IE = 10 µA.
2 C passive Collector terminal; absolute maximum ratings are VCBO 120 V, VCEO 100 V, and DC collector current IC 4 A (8 A pulse, duty 1/2, Pw 20 ms).
3 E passive Emitter terminal; the datasheet rates emitter-base voltage VEBO at 6 V.

Key specifications

Parameter Value
Manufacturer UTC Unisonic Tech
Package SOT-223
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 120 V 2
Collector-Emitter Voltage VCEO 100 V 2
Emitter-Base Voltage VEBO 6 V 2
Collector Current DC IC 4 A 2
Collector Current PULSE IC 8 A Note 2: Duty=1/2, Pw=20ms 2
Power Dissipation PD 1 W 2
Junction Temperature TJ 150 C 2
Storage Temperature TSTG -40 150 C 2
Collector Base Breakdown Voltage BVCBO 120 V IC =10μA, IE =0 2
Collector Emitter Breakdown Voltage BVCEO 100 V IC =1mA, RB=∞ 2
Emitter Base Breakdown Voltage BVEBO 6 V IE =10μA, IC=0 2
Base-Emitter Saturation Voltage VBE(SAT) 0.9 1.2 V IC = 2A, IB =0.2A 2
Collector-Emitter Saturation Voltage VCE(SAT) 150 400 mV IC = 2A, IB=0.2A 2
Collector Cut-Off Current ICBO 1 μA VCB = 100 V, IE =0 2
Emitter Cut-Off Current IEBO 1 μA VEB = 4V, IC=0 2
DC Current Transfer Ratio hFE1 70 400 VCE = 5V, IC = 0.5A 2
DC Current Transfer Ratio hFE2 40 VCE =5V, IC = 3A 2
DC Current Transfer Ratio, Rank S range hFE1 140 280 2
Transition Frequency fT 180 MHz VCE =10V, IC =0.5A 2
Output Capacitance Cob 40 pF VCB =10V, IE =0A, f =1MHz 2
Turn-on Time tON 100 ns See test circuit 2
Storage Time tSTG 900 ns See test circuit 2
Fall Time tF 50 ns See test circuit 2

CAD (KiCad official)

  • Symbol: PZT1816G-S-AA3-R
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT-223 (KiCad packages3D, STEP)
  • 3D model files: pzt1816g-s-aa3-r-etched.step / pzt1816g-s-aa3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pzt1816g-s-aa3-r.step / pzt1816g-s-aa3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC Unisonic Tech datasheet (5 pp, sha256 ee1ff66285334d48, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF