component
PXTA94
Public Made by Adomby adom
SY(顺烨) , SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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PXTA94
SY(顺烨) · IC · SOT-89
PXTA94 from SY(顺烨), in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor, with emitter-base voltage VEBO rated at -5 V and continuous collector current limited to -0.2 A. |
| 2 | COLLECTOR | passive | Collector terminal, rated for collector-base voltage VCBO of -400 V and collector-emitter voltage VCEO of -400 V, with continuous collector current IC of -0.2 A and peak ICM of -0.3 A. |
| 3 | EMITTER | passive | Emitter terminal of the PNP transistor, with emitter-base breakdown V(BR)EBO of -5 V minimum and emitter-base voltage VEBO rated at -5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SY(顺烨) |
| Package | SOT-89 |
| Category | |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | V(BR)CBO | -400 | V | IC=-100µA, IE=0 | 1 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -400 | V | IC=-1mA, IB=0 | 1 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | IE=-100µA, IC=0 | 1 | ||
| Collector Cutoff Current | ICBO | -0.1 | µA | VCB=-400V, IE=0 | 1 | ||
| Emitter Cutoff Current | IEBO | -0.1 | µA | VEB=-4V, IC=0 | 1 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -0.75 | V | IC=-10mA, IB=-1mA | 1 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.2 | V | IC=-10mA, IB=-1mA | 1 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.3 | V | IC=-50mA, IB=-5mA | 1 | ||
| DC Current Gain hFE(1) | hFE(1) | 70 | VCE=-10V, IC=-1mA | 1 | |||
| DC Current Gain hFE(2) | hFE(2) | 80 | 300 | VCE=-10V, IC=-10mA | 1 | ||
| DC Current Gain hFE(3) | hFE(3) | 80 | VCE=-10V, IC=-50mA | 1 | |||
| DC Current Gain hFE(4) | hFE(4) | 60 | VCE=-10V, IC=-100mA | 1 | |||
| Transition Frequency | fT | 50 | MHz | VCE=-20V, IC=-10mA, f=30MHz | 1 | ||
| Collector-Base Voltage | VCBO | -400 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | -400 | V | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | V | 1 | |||
| Continuous Collector Current | IC | -0.2 | A | 1 | |||
| Peak Collector Current | ICM | -0.3 | A | 1 | |||
| Power Dissipation | PD | 0.5 | W | 1 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction to Ambient | 250 | °C/W | Junction to Ambient | 1 |
CAD (KiCad official)
- Symbol:
PXTA94 - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
pxta94-etched.step/pxta94-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pxta94.step/pxta94.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SY(顺烨) datasheet (3 pp, sha256
6295feb63aea3ff4, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PXTA94
**SY(顺烨)** · IC · SOT-89
PXTA94 from SY(顺烨), in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor, with emitter-base voltage VEBO rated at -5 V and continuous collector current limited to -0.2 A. |
| 2 | COLLECTOR | passive | Collector terminal, rated for collector-base voltage VCBO of -400 V and collector-emitter voltage VCEO of -400 V, with continuous collector current IC of -0.2 A and peak ICM of -0.3 A. |
| 3 | EMITTER | passive | Emitter terminal of the PNP transistor, with emitter-base breakdown V(BR)EBO of -5 V minimum and emitter-base voltage VEBO rated at -5 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SY(顺烨) |
| Package | SOT-89 |
| Category | |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | V(BR)CBO | -400 | | | V | IC=-100µA, IE=0 | 1 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -400 | | | V | IC=-1mA, IB=0 | 1 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | | | V | IE=-100µA, IC=0 | 1 |
| Collector Cutoff Current | ICBO | | | -0.1 | µA | VCB=-400V, IE=0 | 1 |
| Emitter Cutoff Current | IEBO | | | -0.1 | µA | VEB=-4V, IC=0 | 1 |
| Base-Emitter Saturation Voltage | VBE(sat) | | | -0.75 | V | IC=-10mA, IB=-1mA | 1 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | -0.2 | V | IC=-10mA, IB=-1mA | 1 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | -0.3 | V | IC=-50mA, IB=-5mA | 1 |
| DC Current Gain hFE(1) | hFE(1) | 70 | | | | VCE=-10V, IC=-1mA | 1 |
| DC Current Gain hFE(2) | hFE(2) | 80 | | 300 | | VCE=-10V, IC=-10mA | 1 |
| DC Current Gain hFE(3) | hFE(3) | 80 | | | | VCE=-10V, IC=-50mA | 1 |
| DC Current Gain hFE(4) | hFE(4) | 60 | | | | VCE=-10V, IC=-100mA | 1 |
| Transition Frequency | fT | 50 | | | MHz | VCE=-20V, IC=-10mA, f=30MHz | 1 |
| Collector-Base Voltage | VCBO | -400 | | | V | | 1 |
| Collector-Emitter Voltage | VCEO | -400 | | | V | | 1 |
| Emitter-Base Voltage | VEBO | -5 | | | V | | 1 |
| Continuous Collector Current | IC | -0.2 | | | A | | 1 |
| Peak Collector Current | ICM | -0.3 | | | A | | 1 |
| Power Dissipation | PD | | | 0.5 | W | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | °C | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |
| Thermal Resistance Junction to Ambient | | | | 250 | °C/W | Junction to Ambient | 1 |
## CAD (KiCad official)
- Symbol: `PXTA94`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `pxta94-etched.step` / `pxta94-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pxta94.step` / `pxta94.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [SY(顺烨) datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603131220331151360) (3 pp, sha256 `6295feb63aea3ff4`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/pxta94-datasheet.pdf)