component
PXTA92
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Nexperia Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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PXTA92
Nexperia · Bipolar Transistors - BJT · SOT-89
PXTA92 from Nexperia, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter of the PNP transistor; emitter-base voltage limited to -5 V (VEBO) with collector open. |
| 2 | C | passive | Collector of the PNP transistor (also the tab/mounting pad); VCEO -300 V, VCBO -300 V, IC max -100 mA, ICM -200 mA. |
| 3 | B | passive | Base of the PNP transistor; peak base current IBM limited to -100 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage (quick reference) | VCEO | -300 | V | open base | 1 | ||
| Collector-base voltage | VCBO | -300 | V | open emitter | 2 | ||
| Collector-emitter voltage | VCEO | -300 | V | open base | 2 | ||
| Emitter-base voltage | VEBO | -5 | V | open collector | 2 | ||
| Collector current | IC | -100 | mA | 2 | |||
| Peak collector current | ICM | -200 | mA | 2 | |||
| Peak base current | IBM | -100 | mA | 2 | |||
| Total power dissipation | Ptot | 1.3 | W | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, collector pad 6 cm2 | 2 | ||
| Junction temperature | Tj | 150 | °C | 2 | |||
| Ambient temperature | Tamb | -65 | 150 | °C | 2 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 2 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 96 | K/W | in free air; FR4 PCB, collector pad 6 cm2 | 2 | ||
| Thermal resistance junction to solder point | Rth(j-sp) | 16 | K/W | 2 | |||
| Collector-base cut-off current | ICBO | -250 | nA | VCB = -200 V; IE = 0 A; Tamb = 25 °C | 3 | ||
| Emitter-base cut-off current | IEBO | -100 | nA | VEB = -3 V; IC = 0 A; Tamb = 25 °C | 3 | ||
| DC current gain | hFE | 25 | VCE = -10 V; IC = -1 mA; Tamb = 25 °C | 3 | |||
| DC current gain | hFE | 40 | VCE = -10 V; IC = -10 mA; Tamb = 25 °C | 3 | |||
| Collector-emitter saturation voltage | VCEsat | -500 | mV | IC = -20 mA; IB = -2 mA; Tamb = 25 °C | 3 | ||
| Base-emitter saturation voltage | VBEsat | -900 | mV | IC = -20 mA; IB = -2 mA; Tamb = 25 °C | 3 | ||
| Collector capacitance | Cc | 6 | pF | VCB = -20 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C | 3 | ||
| Transition frequency | fT | 50 | MHz | VCE = -20 V; IC = -10 mA; f = 100 MHz; Tamb = 25 °C | 3 |
CAD (KiCad official)
- Symbol:
PXTA92 - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
pxta92-etched.step/pxta92-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pxta92.step/pxta92.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (7 pp, sha256
fb162f87f9999771, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PXTA92
**Nexperia** · Bipolar Transistors - BJT · SOT-89
PXTA92 from Nexperia, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter of the PNP transistor; emitter-base voltage limited to -5 V (VEBO) with collector open. |
| 2 | C | passive | Collector of the PNP transistor (also the tab/mounting pad); VCEO -300 V, VCBO -300 V, IC max -100 mA, ICM -200 mA. |
| 3 | B | passive | Base of the PNP transistor; peak base current IBM limited to -100 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage (quick reference) | VCEO | | | -300 | V | open base | 1 |
| Collector-base voltage | VCBO | | | -300 | V | open emitter | 2 |
| Collector-emitter voltage | VCEO | | | -300 | V | open base | 2 |
| Emitter-base voltage | VEBO | | | -5 | V | open collector | 2 |
| Collector current | IC | | | -100 | mA | | 2 |
| Peak collector current | ICM | | | -200 | mA | | 2 |
| Peak base current | IBM | | | -100 | mA | | 2 |
| Total power dissipation | Ptot | | | 1.3 | W | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, collector pad 6 cm2 | 2 |
| Junction temperature | Tj | | | 150 | °C | | 2 |
| Ambient temperature | Tamb | -65 | | 150 | °C | | 2 |
| Storage temperature | Tstg | -65 | | 150 | °C | | 2 |
| Thermal resistance junction to ambient | Rth(j-a) | | | 96 | K/W | in free air; FR4 PCB, collector pad 6 cm2 | 2 |
| Thermal resistance junction to solder point | Rth(j-sp) | | | 16 | K/W | | 2 |
| Collector-base cut-off current | ICBO | | | -250 | nA | VCB = -200 V; IE = 0 A; Tamb = 25 °C | 3 |
| Emitter-base cut-off current | IEBO | | | -100 | nA | VEB = -3 V; IC = 0 A; Tamb = 25 °C | 3 |
| DC current gain | hFE | 25 | | | | VCE = -10 V; IC = -1 mA; Tamb = 25 °C | 3 |
| DC current gain | hFE | 40 | | | | VCE = -10 V; IC = -10 mA; Tamb = 25 °C | 3 |
| Collector-emitter saturation voltage | VCEsat | | | -500 | mV | IC = -20 mA; IB = -2 mA; Tamb = 25 °C | 3 |
| Base-emitter saturation voltage | VBEsat | | | -900 | mV | IC = -20 mA; IB = -2 mA; Tamb = 25 °C | 3 |
| Collector capacitance | Cc | | | 6 | pF | VCB = -20 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C | 3 |
| Transition frequency | fT | 50 | | | MHz | VCE = -20 V; IC = -10 mA; f = 100 MHz; Tamb = 25 °C | 3 |
## CAD (KiCad official)
- Symbol: `PXTA92`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `pxta92-etched.step` / `pxta92-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pxta92.step` / `pxta92.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://assets.nexperia.com/documents/data-sheet/PXTA92.pdf) (7 pp, sha256 `fb162f87f9999771`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/pxta92-datasheet.pdf)