component
PXT4401-HXY
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPXT4401-HXY
HXY MOSFET · Bipolar (BJT) · SOT-89
PXT4401-HXY from HXY MOSFET, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; the datasheet gives an emitter-base voltage rating of 6 V. |
| 2 | COLLECTOR | passive | Collector terminal; the datasheet gives a collector-base voltage of 75 V, a collector-emitter voltage of 40 V and a continuous collector current of 600 mA. |
| 3 | EMITTER | passive | Emitter terminal of the NPN transistor; the datasheet gives an emitter-base voltage rating of 6 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 75 | V | IC= 10μA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 40 | V | IC= 10mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V | IE=10μA, IC=0 | 1 | ||
| DC current gain | hFE(1) | 35 | VCE=10V, IC= 0.1mA | 1 | |||
| DC current gain | hFE(2) | 50 | VCE=10V, IC= 1mA | 1 | |||
| DC current gain | hFE(3) | 75 | VCE=10V, IC= 10mA | 1 | |||
| DC current gain | hFE(4) | 100 | 300 | VCE=10V, IC= 150mA | 1 | ||
| DC current gain | hFE(6) | 40 | VCE=10V, IC= 500mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | 1 | V | IC=500mA, IB= 50mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.3 | V | IC=150mA, IB=15mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 2 | V | IC=500mA, IB=50mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 0.6 | 1.2 | V | IC=150mA, IB=15mA | 1 | |
| Transition frequency | fT | 300 | MHz | VCE=10V, IC=20mA, f=100MHz | 1 | ||
| Output capacitance | Cob | 8 | pF | VCB=10V, IE= 0, f=1MHz | 1 | ||
| Collector-base voltage | VCBO | 75 | V | 1 | |||
| Collector-emitter voltage | VCEO | 40 | V | 1 | |||
| Emitter-base voltage | VEBO | 6 | V | 1 | |||
| Collector current, continuous | IC | 600 | mA | 1 | |||
| Collector power dissipation | PC | 0.5 | W | 1 | |||
| Operation junction and storage temperature range | TJ,Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
PXT4401-HXY - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
pxt4401-hxy-etched.step/pxt4401-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pxt4401-hxy.step/pxt4401-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
ba54c65c5382999a, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).