component
PXT2907A
Public Made by Adomby adom
Nexperia Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| pxt2907a-etched.glb | 16d ago |
| pxt2907a-etched.step | 16d ago |
| pxt2907a-hero.glb | 16d ago |
| pxt2907a-hero.overlay.json | 16d ago |
| pxt2907a.glb | 16d ago |
| pxt2907a.kicad_mod | 16d ago |
| pxt2907a.kicad_sym | 16d ago |
| pxt2907a.lbr | 16d ago |
| pxt2907a.step | 16d ago |
| README.md | 16d ago |
PXT2907A
Nexperia · Bipolar (BJT) · SOT-89
PXT2907A from Nexperia, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter terminal of the PNP transistor; the datasheet limits the emitter-base voltage to -5 V (VEBO) and the peak base current to -200 mA. |
| 2 | C | passive | Collector terminal of the PNP transistor; the datasheet limits the collector-emitter voltage to -60 V (VCEO) and the collector current to -600 mA (peak -800 mA). |
| 3 | B | passive | Base terminal of the PNP transistor; the datasheet specifies a peak base current limit of -200 mA for single pulses with tp ≤ 1 ms. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | -60 | V | open emitter | 3 | ||
| Collector-emitter voltage | VCEO | -60 | V | open base | 3 | ||
| Emitter-base voltage | VEBO | -5 | V | open collector | 3 | ||
| Collector current | IC | -600 | mA | 3 | |||
| Peak collector current | ICM | -800 | mA | 3 | |||
| Peak base current | IBM | -200 | mA | single pulse; tp ≤ 1 ms | 3 | ||
| Total power dissipation | Ptot | 0.5 | W | Tamb ≤ 25 °C; FR4 PCB, standard footprint | 3 | ||
| Total power dissipation | Ptot | 0.8 | W | Tamb ≤ 25 °C; FR4 PCB, mounting pad for collector 1 cm2 | 3 | ||
| Total power dissipation | Ptot | 1.1 | W | Tamb ≤ 25 °C; FR4 PCB, mounting pad for collector 6 cm2 | 3 | ||
| Junction temperature | Tj | 150 | °C | 3 | |||
| Ambient temperature | Tamb | -65 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Thermal resistance from junction to ambient | Rth(j-a) | 250 | K/W | in free air; FR4 PCB, standard footprint | 4 | ||
| Thermal resistance from junction to ambient | Rth(j-a) | 156 | K/W | in free air; FR4 PCB, mounting pad for collector 1 cm2 | 4 | ||
| Thermal resistance from junction to ambient | Rth(j-a) | 113 | K/W | in free air; FR4 PCB, mounting pad for collector 6 cm2 | 4 | ||
| Thermal resistance from junction to solder point | Rth(j-sp) | 30 | K/W | 4 | |||
| Collector-base cut-off current | ICBO | -10 | nA | VCB = -50 V; IE = 0 A; Tamb = 25 °C | 6 | ||
| Collector-base cut-off current | ICBO | -10 | µA | VCB = -50 V; IE = 0 A; Tj = 125 °C | 6 | ||
| Emitter-base cut-off current | IEBO | -50 | nA | VEB = -5 V; IC = 0 A; Tamb = 25 °C | 6 | ||
| DC current gain | hFE | 75 | VCE = -1 V; IC = -0.1 mA; Tamb = 25 °C | 6 | |||
| DC current gain | hFE | 100 | VCE = -1 V; IC = -1 mA; Tamb = 25 °C | 6 | |||
| DC current gain | hFE | 100 | 300 | VCE = -2 V; IC = -150 mA; Tamb = 25 °C | 6 | ||
| DC current gain | hFE | 50 | VCE = -10 V; IC = -500 mA; Tamb = 25 °C | 6 | |||
| Collector-emitter saturation voltage | VCEsat | -400 | mV | IC = -150 mA; IB = -15 mA; Tamb = 25 °C | 6 | ||
| Collector-emitter saturation voltage | VCEsat | -1.6 | V | IC = -500 mA; IB = -50 mA; Tamb = 25 °C | 6 | ||
| Base-emitter saturation voltage | VBEsat | -1.3 | V | IC = -150 mA; IB = -15 mA; Tamb = 25 °C | 6 | ||
| Base-emitter saturation voltage | VBEsat | -2.6 | V | IC = -500 mA; IB = -50 mA; Tamb = 25 °C | 6 | ||
| Delay time | td | 12 | ns | 6 | |||
| Rise time | tr | 30 | ns | 6 | |||
| Turn-on time | ton | 40 | ns | 6 | |||
| Storage time | ts | 300 | ns | 6 | |||
| Fall time | tf | 65 | ns | 6 | |||
| Turn-off time | toff | 365 | ns | IC = -150 mA; IBon = -15 mA; IBoff = 15 mA; Tamb = 25 °C | 6 | ||
| Collector capacitance | CC | 8 | pF | VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C | 6 | ||
| Emitter capacitance | CE | 35 | pF | VEB = -500 mV; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 °C | 6 | ||
| Transition frequency | fT | 200 | MHz | VCE = -20 V; IC = -50 mA; f = 100 MHz; Tamb = 25 °C | 6 |
CAD (KiCad official)
- Symbol:
PXT2907A - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
pxt2907a-etched.step/pxt2907a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pxt2907a.step/pxt2907a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (15 pp, sha256
874a970a52d65600, retrieved 2026-10-17, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).