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PV563BA

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NIKO Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PV563BA

NIKO Semicon · MOSFETs · SOP-8

PV563BA from NIKO Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, with VDS rated at -40 V and continuous drain current of -9.5 A at TA = 25 °C.
2 S passive Source of the P-channel MOSFET, with VDS rated at -40 V and continuous drain current of -9.5 A at TA = 25 °C.
3 S passive Source of the P-channel MOSFET, with VDS rated at -40 V and continuous drain current of -9.5 A at TA = 25 °C.
4 G input Gate of the logic-level P-channel MOSFET, with VGS limited to ±25 V and threshold of -1.3 to -3 V.
5 D passive Drain of the P-channel MOSFET, with VDS rated at -40 V and pulsed drain current up to -40 A.
6 D passive Drain of the P-channel MOSFET, with VDS rated at -40 V and pulsed drain current up to -40 A.
7 D passive Drain of the P-channel MOSFET, with VDS rated at -40 V and pulsed drain current up to -40 A.
8 D passive Drain of the P-channel MOSFET, with VDS rated at -40 V and pulsed drain current up to -40 A.

Key specifications

Parameter Value
Manufacturer NIKO Semicon
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -40 V 1
Gate-Source Voltage VGS -25 25 V 1
Continuous Drain Current ID -9.5 A TA = 25 °C 1
Continuous Drain Current ID -7.6 A TA = 70 °C 1
Pulsed Drain Current IDM -40 A 1
Avalanche Current IAS -32 A 1
Avalanche Energy EAS 53 mJ L = 0.1mH 1
Power Dissipation PD 3 W TA = 25 °C 1
Power Dissipation PD 2 W TA = 70 °C 1
Junction and Storage Temperature Range Tj, Tstg -55 150 °C 1
Drain-Source Breakdown Voltage V(BR)DSS -40 V VGS = 0V, ID = -250A 2
Gate Threshold Voltage VGS(th) -1.3 -1.5 -3 V VDS = VGS, ID = -250A 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0V, VGS = ±25V 2
Zero Gate Voltage Drain Current IDSS -1 A VDS = -32V, VGS = 0V 2
Zero Gate Voltage Drain Current IDSS -10 A VDS = -30V, VGS = 0V, TJ = 55 °C 2
Drain-Source On-State Resistance RDS(ON) 17 29 mΩ VGS = -4.5V, ID = -9.5A 2
Drain-Source On-State Resistance RDS(ON) 13 15 mΩ VGS = -10V, ID = -9.5A 2
Junction-to-Ambient (t ≤ 10s) RJA 40 °C/W t ≦10s, mounted on 1in2 FR-4 board with 2oz copper, still air, TA = 25 °C 1
Junction-to-Ambient (Steady-State) RJA 75 °C/W Steady-State, mounted on 1in2 FR-4 board with 2oz copper, still air, TA = 25 °C 1
Junction-to-Case (Steady-State) RJC 24 °C/W Steady-State 1

CAD (KiCad official)

  • Symbol: PV563BA
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: pv563ba-etched.step / pv563ba-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pv563ba.step / pv563ba.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: NIKO Semicon datasheet (4 pp, sha256 2dd8e286bd9fa054, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF