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Contents

Pinout
Key specifications
Electrical characteristics
CAD (KiCad official)
Provenance

README

markdown

PUMZ1

Nexperia · Bipolar (BJT) · SOT-363

PUMZ1 from Nexperia, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	E1	passive	Emitter of transistor TR1; per-transistor limits are VCEO 40 V maximum and IC 100 mA maximum.
2	B1	passive	Base of transistor TR1; peak base current IBM is limited to 200 mA.
3	C2	passive	Collector of transistor TR2; per-transistor limits are VCBO 50 V, VCEO 40 V and IC 100 mA maximum.
4	E2	passive	Emitter of transistor TR2; per-transistor limits are VCEO 40 V maximum and IC 100 mA maximum.
5	B2	passive	Base of transistor TR2; peak base current IBM is limited to 200 mA.
6	C1	passive	Collector of transistor TR1; per-transistor limits are VCBO 50 V, VCEO 40 V and IC 100 mA maximum.

Key specifications

Parameter	Value
Manufacturer	Nexperia
Package	SOT-363
Category	Transistors/Thyristors
Pins	6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Max	Unit	Conditions	Page
Collector-base voltage	VCBO		50	V	open emitter	2
Collector-emitter voltage	VCEO		40	V	open base	2
Emitter-base voltage	VEBO		5	V	open collector	2
Collector current	IC		100	mA		2
Peak collector current	ICM		200	mA		2
Peak base current	IBM		200	mA		2
Total power dissipation (per transistor)	Ptot		200	mW	Tamb ≤ 25 °C	2
Junction temperature	Tj		150	°C		2
Ambient temperature	Tamb	-65	150	°C		2
Storage temperature	Tstg	-65	150	°C		2
Total power dissipation (per device)	Ptot		300	mW	Tamb ≤ 25 °C; device mounted on FR4 PCB [1]	2
Thermal resistance from junction to ambient (per device)	Rth(j-a)		416	K/W	device mounted on FR4 printed-circuit board [1]	2
Collector-base cut-off current	ICBO		100	nA	VCB = 30 V; IE = 0 A; Tamb = 25 °C	3
Collector-base cut-off current	ICBO		10	µA	VCB = 30 V; IE = 0 A; Tj = 150 °C	3
Emitter-base cut-off current	IEBO		100	nA	VEB = 4 V; IC = 0 A; Tamb = 25 °C	3
DC current gain	hFE	120			VCE = 6 V; IC = 1 mA; Tamb = 25 °C	3
Collector-emitter saturation voltage	VCEsat		200	mV	IC = 50 mA; IB = 5 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C	3
Collector capacitance (TR1)	Cc		1.5	pF	VCB = 12 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C; TR1	3
Collector capacitance (TR2)	Cc		2.2	pF	VCB = 12 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C; TR2	3
Transition frequency	fT	100		MHz	VCE = 12 V; IC = 2 mA; f = 100 MHz; Tamb = 25 °C	3

CAD (KiCad official)

Symbol: PUMZ1
Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
3D model: SOT-363 (KiCad packages3D, STEP)
3D model files: pumz1-etched.step / pumz1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pumz1.step / pumz1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Nexperia datasheet (7 pp, sha256 ce237eefaf79240c, retrieved 2026-10-17, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF