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PUMH20

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Nexperia Digital Transistors, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PUMH20

Nexperia · Digital Transistors · SOT-363

PUMH20 from Nexperia, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND1 power_in Emitter of TR1 (GND), the ground reference for the first resistor-equipped transistor.
2 I1 input Input (base) of TR1, which has built-in bias resistor R1 = 2.2 kΩ (typical) to the base.
3 O2 output Output (collector) of TR2, the open-collector output of the second resistor-equipped transistor.
4 GND2 power_in Emitter of TR2 (GND), the ground reference for the second resistor-equipped transistor.
5 I2 input Input (base) of TR2, which has built-in bias resistor R1 = 2.2 kΩ (typical) to the base.
6 O1 output Output (collector) of TR1, the open-collector output of the first resistor-equipped transistor.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage (per transistor) VCBO 50 V open emitter 3
Collector-emitter voltage (per transistor) VCEO 50 V open base 3
Emitter-base voltage (per transistor) VEBO 10 V open collector 3
Input voltage VI -10 12 V 3
Output current (per transistor) IO 100 mA 3
Total power dissipation (per transistor) Ptot 200 mW Tamb ≤ 25 °C [1] 3
Total power dissipation (per device) Ptot 300 mW Tamb ≤ 25 °C [1] 3
Junction temperature Tj 150 °C 3
Ambient temperature Tamb -65 150 °C 3
Storage temperature Tstg -65 150 °C 3
Thermal resistance junction to ambient (per transistor) Rth(j-a) 625 K/W in free air [1] 4
Thermal resistance junction to ambient (per device) Rth(j-a) 416 K/W in free air [1] 4
Collector-base breakdown voltage V(BR)CBO 50 V IC = 100 µA; IE = 0 A; Tamb = 25 °C 5
Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 2 mA; IB = 0 A; Tamb = 25 °C 5
Collector-base cut-off current ICBO 100 nA VCB = 50 V; IE = 0 A; Tamb = 25 °C 5
Collector-emitter cut-off current ICEO 100 nA VCE = 30 V; IB = 0 A; Tamb = 25 °C 5
Collector-emitter cut-off current ICEO 5 µA VCE = 30 V; IB = 0 A; Tj = 150 °C 5
Emitter-base cut-off current IEBO 2 mA VEB = 5 V; IC = 0 A; Tamb = 25 °C 5
DC current gain hFE 30 VCE = 5 V; IC = 20 mA; Tamb = 25 °C 5
Collector-emitter saturation voltage VCEsat 150 mV IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C 5
Off-state input voltage VI(off) 1.2 0.5 V VCE = 5 V; IC = 1 mA; Tamb = 25 °C 5
On-state input voltage VI(on) 2 1.6 V VCE = 0.3 V; IC = 20 mA; Tamb = 25 °C 5
Bias resistor 1 (input) R1 1.54 2.2 2.86 kΩ 5
Bias resistor ratio R2/R1 0.8 1 1.2 5
Collector capacitance Cc 2.5 pF VCB = 10 V; IE = 0 A; f = 1 MHz; Tamb = 25 °C 5

CAD (KiCad official)

  • Symbol: PUMH20
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: pumh20-etched.step / pumh20-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pumh20.step / pumh20.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (11 pp, sha256 e93badc0c70c4b13, retrieved 2026-10-17, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF