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PUMH13F

Nexperia · Digital Transistors · SOT-363

PUMH13F from Nexperia, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND (emitter) TR1 power_in Emitter of TR1, connected to ground.
2 input (base) TR1 input Base input of TR1 through built-in bias resistor R1 (4.7 kΩ typ), with VI limits of +30 V positive and -5 V negative.
3 output (collector) TR2 output Collector output of TR2, rated for VCEO 50 V and output current IO up to 100 mA.
4 GND (emitter) TR2 power_in Emitter of TR2, connected to ground.
5 input (base) TR2 input Base input of TR2 through built-in bias resistor R1 (4.7 kΩ typ), with VI limits of +30 V positive and -5 V negative.
6 output (collector) TR1 output Collector output of TR1, rated for VCEO 50 V and output current IO up to 100 mA.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-363
Category Triode/MOS Tube/Transistor
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage VCBO 50 V open emitter 4
collector-emitter voltage VCEO 50 V open base 4
emitter-base voltage VEBO 5 V open collector 4
input voltage positive VI 30 V positive 4
input voltage negative VI 5 V negative 4
output current IO 100 mA 4
peak collector current ICM 100 mA single pulse; tp ≤ 1 ms 4
total power dissipation per transistor PUMH13 (SOT363) Ptot 200 mW Tamb ≤ 25 °C 4
total power dissipation per device PUMH13 (SOT363) Ptot 300 mW Tamb ≤ 25 °C 4
junction temperature Tj 150 °C 4
ambient temperature Tamb -65 150 °C 4
storage temperature Tstg -65 150 °C 4
collector-base cut-off current ICBO 100 nA VCB = 50 V; IE = 0 A 7
collector-emitter cut-off current ICEO 1 µA VCE = 30 V; IB = 0 A 7
collector-emitter cut-off current at Tj = 150 °C ICEO 5 µA VCE = 30 V; IB = 0 A; Tj = 150 °C 7
emitter-base cut-off current IEBO 170 µA VEB = 5 V; IC = 0 A 7
DC current gain hFE 100 VCE = 5 V; IC = 10 mA 7
collector-emitter saturation voltage VCEsat 100 mV IC = 5 mA; IB = 0.25 mA 7
off-state input voltage VI(off) 0.6 0.5 V VCE = 5 V; IC = 100 µA 7
on-state input voltage VI(on) 1.3 0.9 V VCE = 0.3 V; IC = 5 mA 7
bias resistor 1 (input) R1 3.3 4.7 6.1 kΩ 7
bias resistor ratio R2/R1 8 10 12 7
collector capacitance Cc 2.5 pF VCB = 10 V; IE = ie = 0 A; f = 1 MHz 7
thermal resistance junction to ambient per transistor PUMH13 (SOT363) Rth(j-a) 625 K/W in free air 5
thermal resistance junction to ambient per device PUMH13 (SOT363) Rth(j-a) 417 K/W in free air 5

CAD (KiCad official)

  • Symbol: PUMH13F
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: pumh13f-etched.step / pumh13f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pumh13f.step / pumh13f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (15 pp, sha256 80abc854114b7cb5, retrieved 2026-11-06, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF