Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

PUMB11

Nexperia · Digital Transistors · SOT-363

PUMB11 from Nexperia, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND1 power_in Ground (emitter) terminal of TR1, the first PNP transistor with built-in 10 kΩ bias resistors (Table 2).
2 I1 input Input (base) of TR1; the input voltage is rated from -40 V (negative) to 10 V (positive) per Table 5.
3 O2 output Output (collector) of TR2; collector-emitter voltage is limited to -50 V (open base) and output current to -100 mA per Table 5.
4 GND2 power_in Ground (emitter) terminal of TR2, the second PNP transistor with built-in 10 kΩ bias resistors (Table 2).
5 I2 input Input (base) of TR2; the input voltage is rated from -40 V (negative) to 10 V (positive) per Table 5.
6 O1 output Output (collector) of TR1; collector-emitter voltage is limited to -50 V (open base) and output current to -100 mA per Table 5.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO -50 V open emitter 3
Collector-emitter voltage VCEO -50 V open base 3
Emitter-base voltage VEBO -10 V open collector 3
Input voltage (positive) VI 10 V positive 3
Input voltage (negative) VI -40 V negative 3
Output current IO -100 mA 3
Total power dissipation, per transistor Ptot 200 mW Tamb ≤ 25 °C 3
Total power dissipation, per device Ptot 300 mW Tamb = 25 °C 3
Junction temperature Tj 150 °C 3
Ambient temperature Tamb -65 150 °C 3
Storage temperature Tstg -65 150 °C 3
Thermal resistance junction to ambient, per transistor Rth(j-a) 625 K/W in free air 4
Thermal resistance junction to ambient, per device Rth(j-a) 417 K/W in free air 4
Collector-base breakdown voltage V(BR)CBO -50 V IC = -100 µA; IE = 0 A 5
Collector-emitter breakdown voltage V(BR)CEO -50 V IC = -2 mA; IB = 0 A 5
Collector-base cut-off current ICBO -100 nA VCB = -50 V; IE = 0 A 5
Collector-emitter cut-off current ICEO -1 µA VCE = -30 V; IB = 0 A 5
Collector-emitter cut-off current at high temperature ICEO -5 µA VCE = -30 V; IB = 0 A; Tj = 150 °C 5
Emitter-base cut-off current IEBO -400 µA VEB = -5 V; IC = 0 A 5
DC current gain hFE -30 VCE = -5 V; IC = -5 mA 5
Collector-emitter saturation voltage VCEsat -100 mV IC = -10 mA; IB = -0.5 mA 5
Off-state input voltage VI(off) -1.1 -0.8 V VCE = -5 V; IC = -100 µA 5
On-state input voltage VI(on) -2.5 -1.8 V VCE = -0.3 V; IC = -10 mA 5
Bias resistor 1 (input) R1 7 10 13 kΩ 5
Bias resistor ratio R2/R1 0.8 1 1.2 5
Collector capacitance Cc 3 pF VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz 5

CAD (KiCad official)

  • Symbol: PUMB11
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: pumb11-etched.step / pumb11-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pumb11.step / pumb11.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (11 pp, sha256 05a59db08fbac5fa, retrieved 2026-10-18, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF