component
PTZTE259.1B-MS
Public Made by Adomby adom
MSKSEMI Zener Diodes, SMA. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 2d ago |
| viewers | 2d ago |
| package.json | 2d ago |
| page.json | 2d ago |
| ptzte259-1b-ms-etched.glb | 2d ago |
| ptzte259-1b-ms-etched.step | 2d ago |
| ptzte259-1b-ms-hero.glb | 2d ago |
| ptzte259-1b-ms-hero.overlay.json | 2d ago |
| ptzte259-1b-ms.glb | 2d ago |
| ptzte259-1b-ms.kicad_mod | 2d ago |
| ptzte259-1b-ms.kicad_sym | 2d ago |
| ptzte259-1b-ms.lbr | 2d ago |
| ptzte259-1b-ms.step | 2d ago |
| README.md | 2d ago |
PTZTE259.1B-MS
MSKSEMI · Zener Diodes · SMA
PTZTE259.1B-MS from MSKSEMI, in a SMA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode, the end marked with the color band; the Zener voltage VZ for this part is 9.1 V nominal (min 9.1 V, max 10.2 V at IZT = 40 mA). |
| 2 | A | passive | Anode terminal of the Zener diode; the datasheet gives a power dissipation rating of 1.0 W and a junction temperature of 150 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SMA |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Zener Voltage | VZ | 9.1 | 9.747 | 10.2 | V | Ta = 25 °C, IZT = 40 mA, measured 40 ms after power is supplied | 3 |
| Test Current | IZT | 40 | mA | Ta = 25 °C | 3 | ||
| Maximum Zener Impedance | ZZ | 6 | Ω | @ IZ = 40 mA | 3 | ||
| Maximum Reverse Current | IR | 20 | μA | @ VR = 6.0 V | 3 | ||
| Typical Temperature Coefficient | αVZ | 5.9 | mV/ºC | @ IZ = 40 mA | 3 | ||
| Power Dissipation | PD | 1 | W | Rating at 25 °C ambient temperature | 2 | ||
| Junction Temperature | TJ | 150 | ºC | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ºC | 2 |
CAD (KiCad official)
- Symbol:
PTZTE259.1B-MS - Footprint:
Diode_SMD:D_SMA - 3D model: SMA (KiCad packages3D, STEP)
- 3D model files:
ptzte259-1b-ms-etched.step/ptzte259-1b-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ptzte259-1b-ms.step/ptzte259-1b-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (5 pp, sha256
740fd864e79fbbbc, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).