component
PTVS8V0P1UP
Public Made by Adomby adom
Nexperia ESD And Surge Protection (TVS/ESD), SOD-128. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPTVS8V0P1UP
Nexperia · ESD And Surge Protection (TVS/ESD) · SOD-128
PTVS8V0P1UP from Nexperia, in a SOD-128. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | cathode | passive | Cathode terminal of the unidirectional TVS diode, marked by the marking bar on the package; the datasheet gives no separate electrical limits for this pin. |
| 2 | anode | passive | Anode terminal of the unidirectional TVS diode, which is the pin opposite the cathode marking bar; the datasheet gives no separate electrical limits for this pin. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOD-128 |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Breakdown voltage (min) | VBR | 8.89 | V | IR = 1 mA at VRWM; Tj = 25 °C | 4 | ||
| Breakdown voltage (typ) | VBR | 9.36 | V | IR = 1 mA at VRWM; Tj = 25 °C | 4 | ||
| Breakdown voltage (max) | VBR | 9.83 | V | IR = 1 mA at VRWM; Tj = 25 °C | 4 | ||
| Reverse standoff voltage | VRWM | 8 | V | 4 | |||
| Reverse leakage current (typ) | IRM | 0.03 | μA | Tj = 25 °C | 4 | ||
| Reverse leakage current (max) | IRM | 25 | μA | Tj = 25 °C | 4 | ||
| Clamping voltage | VCL | 13.6 | V | Tj = 25 °C | 4 | ||
| Rated peak pulse current | IPPM | 44.1 | A | 4 | |||
| Rated peak pulse power | PPPM | 600 | W | IEC 61643-321 (10/1000 μs current waveform) | 3 | ||
| Non-repetitive peak forward current | IFSM | 100 | A | single half-sine wave; tp = 8.3 ms | 3 | ||
| Junction temperature | Tj | 150 | °C | 3 | |||
| Ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Electrostatic discharge voltage | VESD | 30 | kV | IEC 61000-4-2 (contact discharge); per diode | 3 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 200 | K/W | in free air; FR4 PCB, single-sided copper, standard footprint | 3 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 120 | K/W | in free air; FR4 PCB, mounting pad for cathode 1 cm2 | 3 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 60 | K/W | in free air; ceramic PCB, Al2O3, standard footprint | 3 | ||
| Thermal resistance junction to solder point | Rth(j-sp) | 12 | K/W | soldering point of cathode tab | 3 |
CAD (KiCad official)
- Symbol:
PTVS8V0P1UP - Footprint:
Diode_SMD:D_SOD-128 - 3D model: SOD-128 (KiCad packages3D, STEP)
- 3D model files:
ptvs8v0p1up-etched.step/ptvs8v0p1up-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ptvs8v0p1up.step/ptvs8v0p1up.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (12 pp, sha256
e968b01fb8672802, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).