component
PTVS3V3P1UTP
Public Made by Adomby adom
Nexperia TVS, SOD-128. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownPTVS3V3P1UTP
Nexperia · TVS · SOD-128
PTVS3V3P1UTP from Nexperia, in a SOD-128. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode (marking bar side) of the unidirectional TVS diode; for PTVS3V3P1UTP the reverse standoff voltage is 3.3 V and breakdown voltage is 5.20 V to 6.00 V at IR = 10 mA. |
| 2 | A | passive | Anode of the unidirectional TVS diode, rated for 600 W peak pulse power (10/1000 µs) and 75.0 A peak pulse current for PTVS3V3P1UTP. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOD-128 |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Breakdown voltage | VBR | 5.2 | 5.6 | 6 | V | IR = 10 mA; Tj = 25 °C | 4 |
| Reverse leakage current | IRM | 600 | µA | at VRWM; Tj = 25 °C | 4 | ||
| Reverse leakage current (typ) | IRM | 5 | µA | at VRWM; Tj = 25 °C | 4 | ||
| Reverse leakage current at high temperature | IRM | 17 | µA | at VRWM; Tj = 150 °C | 4 | ||
| Clamping voltage | VCL | 8 | V | at IPPM = 75.0 A | 4 | ||
| Rated peak pulse power | PPPM | 600 | W | 10/1000 µs current waveform, IEC 61643-321 | 3 | ||
| Non-repetitive peak forward current | IFSM | 100 | A | single half-sine wave; tp = 8.3 ms | 3 | ||
| Junction temperature | Tj | 185 | °C | 3 | |||
| Ambient temperature | Tamb | -55 | 185 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 185 | °C | 3 | ||
| Electrostatic discharge voltage | VESD | 30 | kV | IEC 61000-4-2, level 4 (contact discharge); Tamb = 25 °C | 3 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 200 | K/W | in free air; FR4 PCB, single-sided copper, tin-plated, standard footprint | 3 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 120 | K/W | in free air; FR4 PCB, mounting pad for cathode 1 cm2 | 3 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 60 | K/W | in free air; ceramic PCB, Al2O3, standard footprint | 3 | ||
| Thermal resistance junction to solder point | Rth(j-sp) | 12 | K/W | soldering point of cathode tab | 3 | ||
| Reverse standoff voltage | VRWM | 3.3 | V | Tj = 25 °C | 4 | ||
| Temperature coefficient | SZ | 1 | mV/K | IZ = 5 mA | 4 |
CAD (KiCad official)
- Symbol:
PTVS3V3P1UTP - Footprint:
Diode_SMD:D_SOD-128 - 3D model: SOD-128 (KiCad packages3D, STEP)
- 3D model files:
ptvs3v3p1utp-etched.step/ptvs3v3p1utp-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ptvs3v3p1utp.step/ptvs3v3p1utp.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (12 pp, sha256
840698ebff840b6c, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).