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PTVS3V3D1BALYL-N

Public Made by Adom

by adom

BORN ESD Protection Devices, DFN1006-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PTVS3V3D1BALYL-N

BORN · ESD Protection Devices · DFN1006-2

PTVS3V3D1BALYL-N from BORN, in a DFN1006-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Pin 1 passive One terminal of the bidirectional TVS diode, rated for a 4.5 V reverse stand-off voltage (VRWM) and a 4.7 V minimum reverse breakdown voltage at IT = 1 mA, with a 45 A peak pulse current (8/20 µs) limit shared across the device. The datasheet does not state a per-pin function, so this entry reflects the device-level ratings only.
2 Pin 2 passive The other terminal of the bidirectional TVS diode, rated for the same 4.5 V reverse stand-off voltage and 4.7 V minimum breakdown voltage, with a 30 kV ESD contact and air rating per IEC 61000-4-2. The datasheet does not state a per-pin function, so this entry reflects the device-level ratings only.

Key specifications

Parameter Value
Manufacturer BORN
Package DFN1006-2
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak Pulse Power (tp=8/20μs) PPP 500 Watts tp=8/20μs 2
Peak Pulse Current (tp=8/20μs) (note 1) Ipp 45 A tp=8/20μs, note 1 2
ESD per IEC 61000-4-2 (Air) VESD 30 kV IEC 61000-4-2 Air 2
ESD per IEC 61000-4-2 (Contact) VESD 30 kV IEC 61000-4-2 Contact 2
Lead Soldering Temperature TL 260 ℃ 10 seconds 2
Junction Temperature TJ -55 125 ℃ 2
Storage Temperature Tstg -55 125 ℃ 2
Reverse Leakage Current IR 0.1 μA VRWM=4.7V, T=25℃ 2
Reverse Breakdown Voltage VBR 4.7 V IT=1mA 2
Reverse Stand-Off Voltage VRWM 4.5 V 2
Peak Pulse Current IPP 45 A tp=8/20μs 2
Clamping Voltage (IPP=1A) VC 5.5 V IPP=1A, tp=8/20μs 2
Clamping Voltage (IPP=20A) VC 7.5 V IPP=20A, tp=8/20μs 2
Clamping Voltage (IPP=45A) VC 11 V IPP=45A, tp=8/20μs 2
Junction Capacitance Cj 70 pF VR=0V, f=1MHz 2

CAD (KiCad official)

  • Symbol: PTVS3V3D1BALYL-N
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2 (KiCad packages3D, STEP)
  • 3D model files: ptvs3v3d1balyl-n-etched.step / ptvs3v3d1balyl-n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ptvs3v3d1balyl-n.step / ptvs3v3d1balyl-n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: BORN datasheet (4 pp, sha256 456f574e52a9b9af, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF