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PT23T3906

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Shanghai Prisemi Elec Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PT23T3906

Shanghai Prisemi Elec · Bipolar Transistors - BJT · SOT-23

PT23T3906 from Shanghai Prisemi Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base of the PNP transistor; breakdown limits are V(BR)EBO -6.0 V (emitter-base) and V(BR)CBO -60 V (collector-base).
2 Emitter passive Emitter of the PNP transistor; emitter-base breakdown voltage V(BR)EBO is -6.0 V at IE=-10uA.
3 Collector passive Collector of the PNP transistor; collector-emitter breakdown voltage V(BR)CEO is -40 V at IC=-1.0mA, with total device dissipation of 150 mW at TA=25°C.

Key specifications

Parameter Value
Manufacturer Shanghai Prisemi Elec
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO -40 V IC=-1.0mA,IB=0 1
Collector-Base Breakdown Voltage V(BR)CBO -60 V IC=-10uA,IE=0 1
Emitter-Base Breakdown Voltage V(BR)EBO -6 V IE=-10uA,IC=0 1
Base Cutoff Current IBL -50 nA VCE=-30V, VEB=-3.0V 1
Collector Cutoff Current ICEX -50 nA VCE=-30V, VEB=-3.0V 1
DC Current Gain HFE 60 IC=-0.1mA,VCE=-1.0V 2
DC Current Gain HFE 80 IC=-1.0mA,VCE=-1.0V 2
DC Current Gain HFE 100 300 IC=-10mA,VCE=-1.0V 2
DC Current Gain HFE 30 IC=-100mA,VCE=-1.0V 2
Collector-Emitter Saturation Voltage VCE(sat) -0.25 V IC=-10mA,IB=-1.0mA 2
Collector-Emitter Saturation Voltage VCE(sat) -0.4 V IC=-50mA,IB=-5.0mA 2
Base-Emitter Saturation Voltage VBE(sat) -0.65 -0.85 V IC=-10mA,IB=-1.0mA 2
Base-Emitter Saturation Voltage VBE(sat) -0.95 V IC=-50mA,IB=-5.0mA 2
Current-Gain-Bandwidth Product fT 250 MHz IC=-10mA,VCE=-20V,f=100MHz 2
Output Capacitance Cobo 4.5 pF VCB=-5.0V,IE=0,f=1.0MHz 2
Input Capacitance Cibo 10 pF VEB=-0.5V,IC=0,f=1.0MHz 2
Input Impedance hie 2 12 kΩ IC=-1.0mA, VCE=-10V, f=1.0kHz 2
Voltage Feedback Ratio hre 0.1 10 X 10-4 IC=-1.0mA, VCE=-10V, f=1.0kHz 2
Small-Signal Current Gain hfe 100 400 IC=-1.0mA, VCE=-10V, f=1.0kHz 2
Output Admittance hoe 3 60 umhos IC=-1.0mA, VCE=-10V, f=1.0kHz 2
Noise Figure NF 4 dB VCE=5.0V, IC=0.1mA, f=1.0kHz, RS=1.0kΩ 2
Delay Time td 35 ns VCC=-3.0V, VBE=0.5V, IC=-10mA,IB1=-1.0mA 2
Rise Time tr 35 ns VCC=-3.0V, VBE=0.5V, IC=-10mA,IB1=-1.0mA 2
Storage Time ts 225 ns VCC=-3.0V, IC=-10mA,IB1=IB2=-1.0mA 2
Fall Time tf 75 ns VCC=-3.0V, IC=-10mA,IB1=IB2=-1.0mA 2
Total Device Dissipation PD 150 mW TA=25℃ 1
Operating Temperature TJ -55 150 ℃ 1
Storage Temperature TSTG -55 150 ℃ 1

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Lead finish:100% matte Sn(Tin)  Mounting position: Any 1

CAD (KiCad official)

  • Symbol: PT23T3906
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pt23t3906-etched.step / pt23t3906-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pt23t3906.step / pt23t3906.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shanghai Prisemi Elec datasheet (5 pp, sha256 db0e6b2d02b5bc5a, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF