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PSMN3R4-30BLE-HXY

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HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorpsmn3r4-30ble-hxyfactory-2.0.0extractor-text

Verified PSMN3R4-30BLE-HXY

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: PSMN3R4-30BLE-HXY · TO-252-2L · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 6-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-n1y0xsvf/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.5)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ psmn3r4-30ble-hxy.kicad_sym✓ psmn3r4-30ble-hxy.kicad_mod✓ psmn3r4-30ble-hxy.step
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Ray Publish 0.1.0 55e9832 8d ago

PSMN3R4-30BLE-HXY

HXY MOSFET · MOSFETs · TO-252-2L

PSMN3R4-30BLE-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with VGS rated ±20 V and a threshold of 1.4 to 2.5 V.
2 D passive Drain of the N-channel MOSFET, with VDS rated 30 V and pulsed drain current up to 384 A.
3 S passive Source of the N-channel MOSFET, with RDS(ON) below 3.8 mΩ at VGS=10 V.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Continuous Drain Current ID@TC=25℃ 120 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 75 A VGS @ 10V 1
Pulsed Drain Current IDM 384 A TC=25℃ 1
Single Pulse Avalanche Energy EAS 196 mJ TC=25℃ 1
Avalanche Current IAS 53.8 A TC=25℃ 1
Total Power Dissipation PD@TC=25℃ 62.5 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, IDS=250mA 2
Zero Gate Voltage Drain Current IDSS 1 mA VDS=24V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 30 mA VDS=24V, VGS=0V, TJ=85°C 2
Gate Threshold Voltage VGS(th) 1.4 1.7 2.5 V VDS=VGS, IDS=250mA 2
Gate Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Drain-Source On-state Resistance RDS(ON) 3 3.8 mW VGS=10V, IDS=20A 2
Drain-Source On-state Resistance RDS(ON) 4.4 mW VGS=10V, IDS=20A, TJ=125°C 2
Drain-Source On-state Resistance RDS(ON) 4 5.5 mW VGS=4.5V, IDS=15A 2
Forward Transconductance Gfs 24.6 S VDS=5V, IDS=10A 2
Diode Forward Voltage VSD 0.8 1.1 V ISD=20A, VGS=0V 2
Gate Resistance RG 1 2 W VGS=0V,VDS=0V,F=1MHz 2
Input Capacitance Ciss 2485 2971 pF VGS=0V, VDS=15V, Frequency=1.0MHz 2
Turn-on Delay Time td(ON) 12.4 23 ns VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W 2
Turn-on Rise Time tr 9.5 18 ns VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W 2
Turn-off Delay Time td(OFF) 27.2 49 ns VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W 2
Turn-off Fall Time tf 35.2 64 ns VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W 2
Total Gate Charge Qg 20.6 28.8 nC VDS=15V, VGS=10V, IDS=20A 2

CAD (KiCad official)

  • Symbol: PSMN3R4-30BLE-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: psmn3r4-30ble-hxy-etched.step / psmn3r4-30ble-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); psmn3r4-30ble-hxy.step / psmn3r4-30ble-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 5616ac124fc0f1ea, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF