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PPMT30V4

Public Made by Adom

by adom

Shanghai Prisemi Elec MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsppmt30v4factory-2.0.0extractor-text
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Generated by kicad-footprint-generator · KiCad file format 20260206
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PPMT30V4

Shanghai Prisemi Elec · MOSFETs · SOT-23

PPMT30V4 from Shanghai Prisemi Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, rated for a gate-source voltage of ±12 V (VGS absolute maximum).
2 S passive Source of the P-channel MOSFET; the device is rated for a drain-source voltage of -30 V and continuous drain current of -4.2 A.
3 D passive Drain of the P-channel MOSFET; rated for a drain-source voltage of -30 V and pulsed drain current of -30 A.

Key specifications

Parameter Value
Manufacturer Shanghai Prisemi Elec
Package SOT-23
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: PPMT30V4
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ppmt30v4-etched.step / ppmt30v4-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ppmt30v4.step / ppmt30v4.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shanghai Prisemi Elec datasheet (7 pp, sha256 3e404ef5a922df9a, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF