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PPMT12V4

Public Made by Adom

by adom

Shanghai Prisemi Elec MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PPMT12V4

Shanghai Prisemi Elec · MOSFETs · SOT-23

PPMT12V4 from Shanghai Prisemi Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, rated for a gate-source voltage VGS of ±8.0 V, with gate threshold VGS(th) of -0.45 V to -1.0 V at ID = -250 μA.
2 S passive Source of the P-channel MOSFET, whose body diode has a continuous source current IS limit of -1.6 A.
3 D passive Drain of the P-channel MOSFET, rated for a drain-source voltage VDS of -12 V and a continuous drain current ID of -4.3 A at TA = 25℃.

Key specifications

Parameter Value
Manufacturer Shanghai Prisemi Elec
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -12 V 1
Gate-Source Voltage VGS -8 8 V 1
Continuous Drain Current ID -4.3 A TA=25℃ 1
Drain Current (Pulsed, as printed) ID -3.4 A TA=70℃ 1
Pulsed Drain Current IDM -34 A 1
Total Power Dissipation PD 1.3 W TA=25℃ 1
Total Power Dissipation PD 0.8 W TA=125℃ 1
Single Pulse Avalanche Energy EAS 33 mJ 1
Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Maximum Junction-to-Ambient Thermal Resistance RθJA 75 100 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -12 V ID=-250μA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-12V, VGS=0V 2
Gate-to-Source Forward Leakage IGSS -100 nA VGS=-8.0V 2
Gate Threshold Voltage VGS(th) -0.45 -0.7 -1 V VDS=VGS, ID=-250μA 2
Static Drain-Source On-Resistance RDS(ON) 0.045 Ω VGS=-4.5V, ID=-4.3A 2
Static Drain-Source On-Resistance RDS(ON) 0.06 Ω VGS=-2.5V, ID=-2.5A 2
Static Drain-Source On-Resistance RDS(ON) 0.1 Ω VGS=-1.8V, ID=-2.0A 2
Forward Transconductance gFS 8.6 S VDS=-10V, ID=-4.3A 2
Continuous Source Current (Body Diode) IS -1.6 A 2
Diode Forward Voltage VSD -1.2 V TJ=25℃, IS=-1.3A, VGS=0V 2
Reverse Recovery Time trr 22 33 ns TJ=25℃, IF=-1.3A, di/dt=-100A/μs 2
Reverse Recovery Charge Qrr 8 12 nC 2

CAD (KiCad official)

  • Symbol: PPMT12V4
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ppmt12v4-etched.step / ppmt12v4-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ppmt12v4.step / ppmt12v4.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shanghai Prisemi Elec datasheet (7 pp, sha256 666ba4562a33cedb, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF