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PNU65020EP-QX

Public Made by Adom

by adom

Nexperia Switching Diodes, SOD-128. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PNU65020EP-QX

Nexperia · Switching Diodes · SOD-128

PNU65020EP-QX from Nexperia, in a SOD-128. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the 650 V, 2 A ultrafast rectifier; the datasheet rates reverse voltage VR ≤ 650 V and average forward current IF(AV) ≤ 2 A for the device.
2 A passive Anode of the ultrafast rectifier diode; the datasheet gives no separate electrical limit for this terminal beyond the device ratings.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOD-128
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak reverse voltage VRRM 650 V 2
Reverse voltage VR 650 V 2
RMS voltage VRMS 460 V Tj = 25 °C 2
Forward current IF 2.8 A δ = 1; Tsp ≤ 156 °C 2
Average forward current IF(AV) 2 A δ = 0.5; f = 20 kHz; square wave; Tsp ≤ 160 °C 2
Non-repetitive peak forward current IFSM 60 A tp = 8.3 ms; single half sine wave (applied at rated load condition); Tj(init) = 25 °C 2
Total power dissipation Ptot 0.81 W Tamb ≤ 25 °C [1]; FR4 PCB, single-sided copper, standard footprint 2
Total power dissipation Ptot 1.3 W [2] FR4 PCB, mounting pad for cathode 1 cm2 2
Junction temperature Tj 175 °C 2
Ambient temperature Tamb -55 175 °C 2
Storage temperature Tstg -65 175 °C 2
Thermal resistance from junction to ambient Rth(j-a) 185 K/W [1] FR4 PCB, single-sided copper, tin-plated, standard footprint; in free air 3
Thermal resistance from junction to ambient Rth(j-a) 115 K/W [2] FR4 PCB, mounting pad for cathode 1 cm2 3
Thermal resistance from junction to solder point Rth(j-sp) 8 K/W [3] soldering point of cathode tab 3
Reverse breakdown voltage V(BR)R 650 V IR = 100 µA; Tj = 25 °C [1] 4
Forward voltage VF 1 1.2 V IF = 2 A; Tj = 25 °C [1] 4
Forward voltage VF 0.87 1.04 V IF = 2 A; Tj = 125 °C [1] 4
Reverse current IR 1 µA VR = 650 V; Tj = 25 °C [1] 4
Reverse current IR 0.76 15 µA VR = 650 V; Tj = 125 °C [1] 4
Reverse recovery time (step recovery) trr 35 65 ns IF = 0.5 A; IR = 1 A; IR(meas) = 0.25 A; Tj = 25 °C 4
Reverse recovery time (step recovery) trr 40 85 ns IF = 1 A; dIF/dt = 50 A/µs; VR = 30 V; Tj = 25 °C 4

CAD (KiCad official)

  • Symbol: PNU65020EP-QX
  • Footprint: Diode_SMD:D_SOD-128
  • 3D model: SOD-128 (KiCad packages3D, STEP)
  • 3D model files: pnu65020ep-qx-etched.step / pnu65020ep-qx-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pnu65020ep-qx.step / pnu65020ep-qx.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (12 pp, sha256 6af65691dbf14412, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF