# PNMT30V6A

**Shanghai Prisemi Elec** · MOSFETs · SOT-23

PNMT30V6A from Shanghai Prisemi Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the MOSFET, rated for a gate-source voltage VGS of ±12 V and designed for direct logic-level (TTL/CMOS) drive. |
| 2 | S | passive | Source of the MOSFET; the datasheet gives no source-specific limit beyond the absolute maximum ratings on page 1. |
| 3 | D | passive | Drain of the MOSFET, rated for a drain-source voltage VDS of 30 V and a drain current ID of 5.8 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Shanghai Prisemi Elec |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Drain Current | ID |  |  | 5.8 | A | Absolute maximum rating@25℃ (table header) | 1 |
| Pulsed Drain Current | IDM |  |  | 30 | A |  | 1 |
| Total Power Dissipation | PD |  |  | 1.4 | W | TA=25℃ | 1 |
| Total Power Dissipation | PD |  |  | 1 | W | TA=75℃ | 1 |
| Avalanche Energy, Single Pulse | EAS |  |  | 32.68 | mJ |  | 1 |
| Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS = 0V, ID = 250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS = 30V,VGS = 0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS = ±12V, VDS = 0V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.6 |  | 1.5 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 25 | 32 | mΩ | VGS = 10V, ID = 5.8A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 28 | 35 | mΩ | VGS = 4.5V, ID = 5A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 35 | 45 | mΩ | VGS = 2.5V, ID = 4A | 2 |
| Diode Forward Voltage | VSD |  | 0.71 | 1 | V |  | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 2 | A |  | 2 |
| Thermal resistance, junction to ambient | Rthja |  | 159 |  | C/W | Single Pulse (Fig.6 annotation) | 3 |

## CAD (KiCad official)

- Symbol: `PNMT30V6A`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `pnmt30v6a-etched.step` / `pnmt30v6a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pnmt30v6a.step` / `pnmt30v6a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Shanghai Prisemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8756858974463639552) (6 pp, sha256 `4679cc7721f1a765`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/pnmt30v6a-datasheet.pdf)