component
PNM723T30V01
Public Made by Adomby adom
Shanghai Prisemi Elec MOSFETs, SOT-723. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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| pnm723t30v01-etched.step | 6d ago |
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PNM723T30V01
Shanghai Prisemi Elec · MOSFETs · SOT-723
PNM723T30V01 from Shanghai Prisemi Elec, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel enhancement MOSFET; the datasheet gives VGS absolute maximum of ±20 V and gate threshold VGS(th) of 0.5 to 1.5 V. |
| 2 | S | passive | Source of the MOSFET, the reference for VGS; source-drain diode forward voltage VFSD is 0.75 to 1 V at ID = 100 mA, VGS = 0 V. |
| 3 | D | passive | Drain of the MOSFET; the datasheet gives VDS of 30 V, continuous drain current ID of 0.10 A, pulsed ID of 0.36 A, and total power dissipation of 150 mW at TA = 25 ℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shanghai Prisemi Elec |
| Package | SOT-723 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDSS | 30 | V | ID =10μA,VGS=0V | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS =30V,VGS=0V | 1 | ||
| Gate-Body Leakage Current | IGSS | -1 | 1 | μA | VDS =0V,VGS=±20V | 1 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 1.5 | V | VDS =VGS, ID =250μA | 1 | |
| Static Drain-Source On-Resistance | RDS(ON) | 6.5 | 9 | Ω | VGS=2.5V, ID =1mA | 1 | |
| Static Drain-Source On-Resistance | RDS(ON) | 7 | 9 | Ω | VGS=2.5V, ID =10mA | 1 | |
| Static Drain-Source On-Resistance | RDS(ON) | 4 | 6 | Ω | VGS=4V, ID =10mA | 1 | |
| Static Drain-Source On-Resistance | RDS(ON) | 3 | 5 | Ω | VGS=10V, ID =100mA | 1 | |
| Source-Drain Diode Forward Voltage | VFSD | 0.75 | 1 | V | ID=100mA,VGS=0V | 1 | |
| Input Capacitance | CISS | 40 | pF | VGS=0V, VDS =25V, f=1MHz | 1 | ||
| Output Capacitance | COSS | 10 | pF | VGS=0V, VDS =25V, f=1MHz | 1 | ||
| Reverse Transfer Capacitance | CRSS | 5 | pF | VGS=0V, VDS =25V, f=1MHz | 1 | ||
| Drain-Source Voltage | VDS | 30 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 0.1 | A | Continuous | 2 | ||
| Pulsed Drain Current | ID | 0.36 | A | Pulsed | 2 | ||
| Total Power Dissipation | PD | 150 | mW | TA=25℃ | 2 |
CAD (KiCad official)
- Symbol:
PNM723T30V01 - Footprint:
Package_TO_SOT_SMD:SOT-723 - 3D model: SOT-723, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.5 mm nominal SOT-723 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
pnm723t30v01-etched.step/pnm723t30v01-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pnm723t30v01.step/pnm723t30v01.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shanghai Prisemi Elec datasheet (5 pp, sha256
741b0ad02e9cbc89, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).