# PNM523T30V01

**Shanghai Prisemi Elec** · MOSFETs · SOT-523

PNM523T30V01 from Shanghai Prisemi Elec, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel enhancement MOSFET, rated for a gate-source voltage of ±20 V with a threshold VGS(th) of 0.5 to 1.5 V. |
| 2 | S | passive | Source terminal of the MOSFET, referenced for the source-drain diode forward voltage VFSD of 0.75 to 1 V at ID=100 mA and VGS=0 V. |
| 3 | D | passive | Drain terminal, rated for a drain-source voltage VDS of 30 V and a continuous drain current ID of 0.10 A (pulsed 0.36 A). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Shanghai Prisemi Elec |
| Package | SOT-523 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDSS | 30 |  |  | V | ID =10μA,VGS=0V | 1 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS =30V,VGS=0V | 1 |
| Gate-Body Leakage Current | IGSS | -1 |  | 1 | μA | VDS =0V,VGS=±20V | 1 |
| Gate Threshold Voltage | VGS(th) | 0.5 |  | 1.5 | V | VDS =VGS, ID =250μA | 1 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 4 | 6 | Ω | VGS=4V, ID =10mA | 1 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 3 | 5 | Ω | VGS=10V, ID =100mA | 1 |
| Input Capacitance | CISS |  |  | 40 | pF | VGS=0V, VDS =25V, f=1MHz | 1 |
| Output Capacitance | COSS |  |  | 10 | pF |  | 1 |
| Reverse Transfer Capacitance | CRSS |  |  | 5 | pF |  | 1 |
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 2 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 2 |
| Continuous Drain Current | ID |  |  | 0.1 | A |  | 2 |
| Pulsed Drain Current | ID |  |  | 0.36 | A |  | 2 |
| Total Power Dissipation | PD |  |  | 150 | mW | TA=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `PNM523T30V01`
- Footprint: `Package_TO_SOT_SMD:SOT-523`
- 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files: `pnm523t30v01-etched.step` / `pnm523t30v01-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pnm523t30v01.step` / `pnm523t30v01.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Shanghai Prisemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588917468110991360) (6 pp, sha256 `4f9bff4e43e4f8f4`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/pnm523t30v01-datasheet.pdf)