component
PNM523T201E0
Public Made by Adomby adom
Shanghai Prisemi Elec MOSFETs, SOT-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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| page.json | 16d ago |
| pnm523t201e0-etched.glb | 16d ago |
| pnm523t201e0-etched.step | 16d ago |
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| pnm523t201e0-hero.overlay.json | 16d ago |
| pnm523t201e0.glb | 16d ago |
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| pnm523t201e0.lbr | 16d ago |
| pnm523t201e0.step | 16d ago |
| README.md | 16d ago |
PNM523T201E0
Shanghai Prisemi Elec · MOSFETs · SOT-523
PNM523T201E0 from Shanghai Prisemi Elec, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the datasheet limits gate-source voltage VGS to ±8 V. |
| 2 | S | passive | Source of the N-channel MOSFET; the datasheet rates the device at VDS 20 V with VGS limited to ±8 V. |
| 3 | D | passive | Drain of the N-channel MOSFET; the datasheet rates VDS at 20 V, continuous ID at ±1 A (TJ=150℃), and pulsed IDP at ±4 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shanghai Prisemi Elec |
| Package | SOT-523 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -8 | 8 | V | 1 | ||
| Continuous Drain Current | ID | -1 | 1 | A | TJ=150℃ | 1 | |
| Pulsed Drain Current | IDP | -4 | 4 | A | 1 | ||
| Total power dissipation | PD | 140 | mW | 1 | |||
| Channel temperature | TCH | 150 | ℃ | 1 | |||
| Range of storage temperature | TSTG | -55 | 150 | ℃ | 1 | ||
| Channel to ambient thermal resistance | Rth(ch-a) | 800 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | ID =1mA,VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS =20V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -10 | 10 | μA | VDS =0V,VGS=±8V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 1.1 | V | VDS =10V, ID =1mA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.2 | 0.25 | Ω | VGS=4.5V, ID =650mA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.25 | 0.3 | Ω | VGS=2.5V, ID =450mA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.31 | 0.45 | Ω | VGS=1.8V, ID =250mA | 2 |
CAD (KiCad official)
- Symbol:
PNM523T201E0 - Footprint:
Package_TO_SOT_SMD:SOT-523 - 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
pnm523t201e0-etched.step/pnm523t201e0-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pnm523t201e0.step/pnm523t201e0.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shanghai Prisemi Elec datasheet (6 pp, sha256
f69c978e0b345613, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).