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Set visibility: public

Ray ·0bd1fb607e ·1mo ago ·parent f4663a0
1 file changed +6−3
page.json+6−3
@@ -56,7 +56,7 @@         "number": "5",         "name": "SW",         "type": "power_out",-        "description": "Drain pin of the integrated 650 V smart power MOSFET, connected to the transformer primary winding. Pins 5, 6, 7, 8 are tied together internally for current-handling and heat-sinking. RDS(on) typ 2.5 \u03a9 at ISW=1 A; avalanche pulse current 3 A (Tpulse=100 us)."+        "description": "Drain pin of the integrated 650 V smart power MOSFET, connected to the transformer primary winding. Pins 5, 6, 7, 8 are tied together internally for current-handling and heat-sinking. RDS(on) typ 2.5 Ω at ISW=1 A; avalanche pulse current 3 A (Tpulse=100 us)."       },       {         "number": "6",@@ -74,7 +74,7 @@         "number": "8",         "name": "SW",         "type": "power_out",-        "description": "Drain of the integrated 650 V power MOSFET, paralleled with pins 5, 6, 7 to form the SW node connecting to the transformer primary. Recommended copper area >20 mm^2 for thermal dissipation (R\u03b8JC ~80 \u00b0C/W package, ~40 \u00b0C/W actual with good copper)."+        "description": "Drain of the integrated 650 V power MOSFET, paralleled with pins 5, 6, 7 to form the SW node connecting to the transformer primary. Recommended copper area >20 mm^2 for thermal dissipation (RθJC ~80 °C/W package, ~40 °C/W actual with good copper)."       }     ],     "provenance": {@@ -138,5 +138,8 @@     "docs/pn8680psec-r1-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ]+  ],+  "visibility": {+    "public": true+  } }\ No newline at end of file