component
PN8370NEC-T1H
Public Made by Adomby adom
Wuxi Chipown Micro-electronics AC-DC Controllers & Regulators, DIP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPN8370NEC-T1H
Wuxi Chipown Micro-electronics · AC-DC Controllers & Regulators · DIP-8
PN8370NEC-T1H from Wuxi Chipown Micro-electronics, in a DIP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VDD | power_in | Operating supply voltage input pin; VDD range 8 to 30 V, start threshold VDDon 16.5 V typ, UVLO VDDoff 8.5 V typ, abs max -0.3 to 40 V. |
| 2 | NC | unconnected | No connect pin (empty pin). |
| 3 | FB | input | Feedback pin; auxiliary winding voltage is fed back through a resistor divider to regulate the output, with 2.5 V typ CV reference and -0.3 to 5.5 V abs max. |
| 4 | CS | input | Current sense pin; sense resistor sets the CC point and max output power, OCP threshold 500 mV typ, abs max -0.3 to 5.5 V. |
| 5 | SW | passive | Drain of the integrated smart power MOSFET connected to the transformer primary, rated -0.3 to 650 V (pins 5 and 6 are both SW). |
| 6 | SW | passive | Drain of the integrated smart power MOSFET connected to the transformer primary, rated -0.3 to 650 V (pins 5 and 6 are both SW). |
| 7 | GND | power_in | Ground reference pin (pins 7 and 8 are both GND). |
| 8 | GND | power_in | Ground reference pin (pins 7 and 8 are both GND). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi Chipown Micro-electronics |
| Package | DIP-8 |
| Category | Power Management ICs |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Power MOSFET breakdown voltage | VBVDSS | 650 | 700 | V | ISW = 250uA | 3 | |
| Off-state leakage current | IOFF | 100 | uA | VSW = 500V | 3 | ||
| On-resistance | RDS(on) | 2.5 | Ω | ISW = 1A, TJ = 25℃ | 3 | ||
| Startup voltage | VSW_START | 30 | V | VDD=VDDon - 1V | 3 | ||
| VDD operating voltage range | VDD | 8 | 30 | V | 3 | ||
| VDD startup threshold | VDDon | 14.5 | 16.5 | 18.5 | V | 3 | |
| VDD undervoltage threshold | VDDoff | 7.5 | 8.5 | 9.5 | V | 3 | |
| VDD overvoltage protection | VDDovp | 30 | 34 | 38 | V | 3 | |
| Startup charging current to VDD | IDD_CH | 0.85 | mA | VDD=VDDon - 1V, Vsw=100V | 3 | ||
| Operating current switching | IDD | 0.3 | 0.5 | 0.7 | mA | VDD = VDDon＋1V | 3 |
| Fault state current | IDD_FAULT | 0.5 | mA | VDD＝15V after fault | 3 | ||
| Overcurrent threshold | VTH_OC | 485 | 500 | 515 | mV | 3 | |
| Max overcurrent threshold | VTH_OC_MAX | 560 | mV | 3 | |||
| No-load feedback reference voltage | VREF_CV | 2.475 | 2.5 | 2.525 | V | 3 | |
| Output OVP threshold | VFBOVP | 2.85 | 3 | 3.15 | V | 3 | |
| Max cable compensation current | Icable | 22 | 24 | 26 | uA | VFB=0V | 3 |
| Output UVP masking time | TUVP | 20 | 32 | ms | 开关频率50kHz | 3 | |
| Overtemperature protection temperature | TSD | 135 | 150 | °C | 3 | ||
| VDD pin voltage | VDD | -0.3 | 40 | V | 2 | ||
| SW pin voltage | SW | -0.3 | 650 | V | 2 | ||
| FB, CS pin voltage | -0.3 | 5.5 | V | 2 | |||
| Junction operating temperature | TJ | -40 | 150 | °C | 2 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 2 | ||
| Lead soldering temperature | 260 | °C | 10 s | 2 | |||
| ESD HBM | -4 | 4 | kV | HBM, ESDA/JEDEC JDS-001-2014 | 2 | ||
| Max drain pulse current | 3 | A | 2 | ||||
| Package thermal resistance DIP-8 | 40 | °C/W | DIP-8 | 2 | |||
| Min CS detection threshold | Vcs_min | 170 | mV | 3 | |||
| Leading edge blanking time | TLEB | 300 | ns | 3 | |||
| Max on time | Tonmax | 50 | us | 3 | |||
| Overcurrent delay time | TD_OC | 100 | ns | 3 | |||
| Output UVP threshold | VUVP | 1.55 | V | 3 | |||
| Min off time | Toffmin | 5 | us | 3 | |||
| Max off time | Toffmax | 2.2 | ms | 3 | |||
| Overtemperature hysteresis | THYST | 30 | °C | 3 |
CAD (KiCad official)
- Symbol:
PN8370NEC-T1H - Footprint:
Package_DIP:DIP-8_W7.62mm - 3D model: DIP-8 (KiCad packages3D, STEP)
- 3D model files:
pn8370nec-t1h-etched.step/pn8370nec-t1h-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pn8370nec-t1h.step/pn8370nec-t1h.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi Chipown Micro-electronics datasheet (11 pp, sha256
e779fa65dcfdbbe4, retrieved 2026-10-23, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).