component
PN8160NEC-T1T
Public Made by Adomby adom
Wuxi Chipown Micro-electronics AC-DC Controllers & Regulators, DIP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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PN8160NEC-T1T
Wuxi Chipown Micro-electronics · AC-DC Controllers & Regulators · DIP-8
PN8160NEC-T1T from Wuxi Chipown Micro-electronics, in a DIP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GND | power_in | Ground pin; keep the trace from GND to the input electrolytic capacitor ground short and thick. |
| 2 | VDD | power_in | Operating supply input, abs max -0.3 to 45V, startup threshold 16.5V typ, UVLO 8V typ and OVP 40V typ, charged by the internal 1mA high-voltage startup source. |
| 3 | FB | input | Feedback input, abs max -0.3 to 5V, open-circuit voltage 5.1V typ, with overload protection above 4.4V. |
| 4 | DMG | input | Demagnetization pin that samples the output voltage and input voltage through a resistor divider, abs max -0.3 to 5V, with OVP threshold 3V typ. |
| 5 | SW | passive | High-voltage MOSFET drain pin, rated -0.3 to 650V, internally common with pins 6, 7 and 8. |
| 6 | SW | passive | High-voltage MOSFET drain pin, rated -0.3 to 650V, internally common with pins 5, 7 and 8. |
| 7 | SW | passive | High-voltage MOSFET drain pin, rated -0.3 to 650V, internally common with pins 5, 6 and 8. |
| 8 | SW | passive | High-voltage MOSFET drain pin, rated -0.3 to 650V, internally common with pins 5, 6 and 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi Chipown Micro-electronics |
| Package | DIP-8 |
| Category | Power Management ICs |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 650 | 690 | V | ISW =250uA | 3 | |
| Off-state leakage current | IOFF | 100 | μA | Vsw =650V | 3 | ||
| On-resistance PN8160T/R/H | RDS(on) | 1.6 | Ω | ISW = 0.8A, TJ = 25℃ | 3 | ||
| VDD startup threshold | UVLOoff | 15.5 | 16.5 | 17.5 | V | 3 | |
| VDD undervoltage threshold | UVLOon | 7 | 8 | 9 | V | 3 | |
| VDD overvoltage protection | OVP | 38 | 40 | 43 | V | 3 | |
| Switching operating current | IVDD0 | 1 | 2.5 | 3.5 | mA | VFB=3.5V | 3 |
| Burst operating current | IVDD1 | 0.4 | 0.8 | 1.5 | mA | VFB=0.5V | 3 |
| Fault operating current | IVDD_Fault | 0.3 | 0.5 | 1 | mA | 3 | |
| Switching frequency | Fosc | 60 | 65 | 70 | KHz | IDMG>330uA | 3 |
| Switching frequency | Fosc | 77 | 85 | 92 | KHz | IDMG<330uA | 3 |
| Burst-mode frequency | Fosc_BM | 22 | 25 | 28 | KHz | 3 | |
| FB open-circuit voltage | VFB | 4.8 | 5.1 | 5.4 | V | ISW =250uA | 3 |
| Maximum duty cycle | Dmax | 70 | 90 | % | 3 | ||
| Overload protection threshold | Vth_OLP | 4.1 | 4.4 | 4.7 | V | 4 | |
| Max peak current PN8160T/R/X | IDlim | 0.89 | 0.95 | 1.01 | A | 4 | |
| DMG OVP threshold | VDMG_OVP | 2.7 | 3 | 3.3 | V | 4 | |
| Over-temperature protection temperature | TSD | 130 | 145 | °C | 4 | ||
| VDD voltage | VDD | -0.3 | 45 | V | 3 | ||
| FB, CS, DMG voltage | -0.3 | 5 | V | 3 | |||
| SW voltage | -0.3 | 650 | V | 3 | |||
| Junction temperature range | TJ | -40 | 150 | ℃ | 3 | ||
| Storage temperature range | Tstg | -55 | 150 | ℃ | 3 | ||
| HBM ESD | -4 | 4 | kV | HBM | 3 | ||
| Drain pulse current | 5 | A | Tpulse=100us | 3 | |||
| Thermal resistance junction-case DIP-8 | RθJC | 40 | ℃/W | DIP-8 | 3 | ||
| VDD restart threshold | VRestart | 4 | V | 3 | |||
| Soft-start time | Tss | 3.2 | ms | 4 | |||
| Thermal shutdown hysteresis | THYST | 30 | °C | 4 |
CAD (KiCad official)
- Symbol:
PN8160NEC-T1T - Footprint:
Package_DIP:DIP-8_W7.62mm - 3D model: DIP-8 (KiCad packages3D, STEP)
- 3D model files:
pn8160nec-t1t-etched.step/pn8160nec-t1t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pn8160nec-t1t.step/pn8160nec-t1t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi Chipown Micro-electronics datasheet (11 pp, sha256
e53f67f06eac0ac7, retrieved 2026-10-23, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PN8160NEC-T1T
**Wuxi Chipown Micro-electronics** · AC-DC Controllers & Regulators · DIP-8
PN8160NEC-T1T from Wuxi Chipown Micro-electronics, in a DIP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GND | power_in | Ground pin; keep the trace from GND to the input electrolytic capacitor ground short and thick. |
| 2 | VDD | power_in | Operating supply input, abs max -0.3 to 45V, startup threshold 16.5V typ, UVLO 8V typ and OVP 40V typ, charged by the internal 1mA high-voltage startup source. |
| 3 | FB | input | Feedback input, abs max -0.3 to 5V, open-circuit voltage 5.1V typ, with overload protection above 4.4V. |
| 4 | DMG | input | Demagnetization pin that samples the output voltage and input voltage through a resistor divider, abs max -0.3 to 5V, with OVP threshold 3V typ. |
| 5 | SW | passive | High-voltage MOSFET drain pin, rated -0.3 to 650V, internally common with pins 6, 7 and 8. |
| 6 | SW | passive | High-voltage MOSFET drain pin, rated -0.3 to 650V, internally common with pins 5, 7 and 8. |
| 7 | SW | passive | High-voltage MOSFET drain pin, rated -0.3 to 650V, internally common with pins 5, 6 and 8. |
| 8 | SW | passive | High-voltage MOSFET drain pin, rated -0.3 to 650V, internally common with pins 5, 6 and 7. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi Chipown Micro-electronics |
| Package | DIP-8 |
| Category | Power Management ICs |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 650 | 690 | | V | ISW =250uA | 3 |
| Off-state leakage current | IOFF | | | 100 | μA | Vsw =650V | 3 |
| On-resistance PN8160T/R/H | RDS(on) | | | 1.6 | Ω | ISW = 0.8A, TJ = 25℃ | 3 |
| VDD startup threshold | UVLOoff | 15.5 | 16.5 | 17.5 | V | | 3 |
| VDD undervoltage threshold | UVLOon | 7 | 8 | 9 | V | | 3 |
| VDD overvoltage protection | OVP | 38 | 40 | 43 | V | | 3 |
| Switching operating current | IVDD0 | 1 | 2.5 | 3.5 | mA | VFB=3.5V | 3 |
| Burst operating current | IVDD1 | 0.4 | 0.8 | 1.5 | mA | VFB=0.5V | 3 |
| Fault operating current | IVDD_Fault | 0.3 | 0.5 | 1 | mA | | 3 |
| Switching frequency | Fosc | 60 | 65 | 70 | KHz | IDMG>330uA | 3 |
| Switching frequency | Fosc | 77 | 85 | 92 | KHz | IDMG<330uA | 3 |
| Burst-mode frequency | Fosc_BM | 22 | 25 | 28 | KHz | | 3 |
| FB open-circuit voltage | VFB | 4.8 | 5.1 | 5.4 | V | ISW =250uA | 3 |
| Maximum duty cycle | Dmax | 70 | | 90 | % | | 3 |
| Overload protection threshold | Vth_OLP | 4.1 | 4.4 | 4.7 | V | | 4 |
| Max peak current PN8160T/R/X | IDlim | 0.89 | 0.95 | 1.01 | A | | 4 |
| DMG OVP threshold | VDMG_OVP | 2.7 | 3 | 3.3 | V | | 4 |
| Over-temperature protection temperature | TSD | 130 | 145 | | °C | | 4 |
| VDD voltage | VDD | -0.3 | | 45 | V | | 3 |
| FB, CS, DMG voltage | | -0.3 | | 5 | V | | 3 |
| SW voltage | | -0.3 | | 650 | V | | 3 |
| Junction temperature range | TJ | -40 | | 150 | ℃ | | 3 |
| Storage temperature range | Tstg | -55 | | 150 | ℃ | | 3 |
| HBM ESD | | -4 | | 4 | kV | HBM | 3 |
| Drain pulse current | | | | 5 | A | Tpulse=100us | 3 |
| Thermal resistance junction-case DIP-8 | RθJC | | 40 | | ℃/W | DIP-8 | 3 |
| VDD restart threshold | VRestart | | 4 | | V | | 3 |
| Soft-start time | Tss | | 3.2 | | ms | | 4 |
| Thermal shutdown hysteresis | THYST | | 30 | | °C | | 4 |
## CAD (KiCad official)
- Symbol: `PN8160NEC-T1T`
- Footprint: `Package_DIP:DIP-8_W7.62mm`
- 3D model: DIP-8 (KiCad packages3D, STEP)
- 3D model files: `pn8160nec-t1t-etched.step` / `pn8160nec-t1t-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pn8160nec-t1t.step` / `pn8160nec-t1t.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Wuxi Chipown Micro-electronics datasheet](docs/pn8160nec-t1t-datasheet.pdf) (11 pp, sha256 `e53f67f06eac0ac7`, retrieved 2026-10-23, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/pn8160nec-t1t-datasheet.pdf)