component
PN8160NEC-T1H
Public Made by Adomby adom
Wuxi Chipown Micro electronics AC-DC Controllers And Regulators, DIP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 25d ago |
| viewers | 25d ago |
| package.json | 25d ago |
| page.json | 25d ago |
| pn8160nec-t1h-etched.glb | 25d ago |
| pn8160nec-t1h-etched.step | 25d ago |
| pn8160nec-t1h-hero.glb | 25d ago |
| pn8160nec-t1h-hero.overlay.json | 25d ago |
| pn8160nec-t1h.glb | 25d ago |
| pn8160nec-t1h.kicad_mod | 25d ago |
| pn8160nec-t1h.kicad_sym | 25d ago |
| pn8160nec-t1h.lbr | 25d ago |
| pn8160nec-t1h.step | 25d ago |
| README.md | 25d ago |
PN8160NEC-T1H
Wuxi Chipown Micro electronics · AC-DC Controllers And Regulators · DIP-8
PN8160NEC-T1H from Wuxi Chipown Micro electronics, in a DIP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GND | power_in | Ground pin of the controller; the datasheet recommends routing the GND pin to the input electrolytic capacitor ground as short and thick as possible. |
| 2 | VDD | power_in | Operating supply voltage input; the datasheet gives a VDD absolute maximum of -0.3 to 45 V, with UVLO off at 16.5 V typ, UVLO on at 8 V typ, and OVP at 40 V typ. |
| 3 | FB | input | Feedback input; the datasheet rates the FB pin at -0.3 to 5 V and gives an FB open-circuit voltage of 5.1 V typ and a load-protection threshold (Vth_OLP) of 4.4 V typ. |
| 4 | DMG | input | Demagnetization sense pin that samples the output voltage and input voltage through a resistor divider; the datasheet rates DMG at -0.3 to 5 V and gives a DMG overvoltage threshold of 3 V typ. |
| 5 | SW | passive | High-voltage MOSFET drain pin; the datasheet rates SW at -0.3 to 650 V and gives a BVDSS of 650 V min. |
| 6 | SW | passive | High-voltage MOSFET drain pin; the datasheet rates SW at -0.3 to 650 V and gives a BVDSS of 650 V min. |
| 7 | SW | passive | High-voltage MOSFET drain pin; the datasheet rates SW at -0.3 to 650 V and gives a BVDSS of 650 V min. |
| 8 | SW | passive | High-voltage MOSFET drain pin; the datasheet rates SW at -0.3 to 650 V and gives a BVDSS of 650 V min. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi Chipown Micro electronics |
| Package | DIP-8 |
| Category | Power Management (PMIC) |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| VDD pin withstand voltage | -0.3 | 45 | V | 3 | |||
| FB, CS, DMG pin withstand voltage | -0.3 | 5 | V | 3 | |||
| SW pin withstand voltage | -0.3 | 650 | V | 3 | |||
| Junction operating temperature range | -40 | 150 | ℃ | 3 | |||
| Storage temperature range | -55 | 150 | ℃ | 3 | |||
| ESD capability, human body model (HBM) | -4 | 4 | kV | HBM, per ESDA/JEDEC JDS-001-2014 | 3 | ||
| Drain pulse current | 5 | A | Tpulse=100us | 3 | |||
| Power MOSFET breakdown voltage | BVDSS | 650 | 690 | V | ISW =250uA | 3 | |
| VDD start threshold voltage | UVLOoff | 15.5 | 16.5 | 17.5 | V | 3 | |
| VDD undervoltage protection threshold voltage | UVLOon | 7 | 8 | 9 | V | 3 | |
| VDD overvoltage protection voltage | OVP | 38 | 40 | 43 | V | 3 | |
| Switching operating current | IVDD0 | 1 | 2.5 | 3.5 | mA | VFB=3.5V | 3 |
| Intermittent (burst) operating current | IVDD1 | 0.4 | 0.8 | 1.5 | mA | VFB=0.5V | 3 |
| Protection-state operating current | IVDD_Fault | 0.3 | 0.5 | 1 | mA | 3 | |
| Switching frequency (high input voltage segment) | Fosc | 60 | 65 | 70 | KHz | IDMG>330uA | 3 |
| Switching frequency (low input voltage segment) | Fosc | 77 | 85 | 92 | KHz | IDMG<330uA | 3 |
| Intermittent-mode operating frequency | Fosc_BM | 22 | 25 | 28 | KHz | 3 | |
| FB open-circuit voltage | VFB | 4.8 | 5.1 | 5.4 | V | ISW =250uA | 3 |
| Maximum duty cycle | Dmax | 70 | 90 | ％ | 3 | ||
| Overload protection threshold voltage | Vth_OLP | 4.1 | 4.4 | 4.7 | V | 4 | |
| Overtemperature protection temperature | TSD | 130 | 145 | °C | 4 | ||
| DMG overvoltage protection threshold voltage | VDMG_OVP | 2.7 | 3 | 3.3 | V | 4 | |
| Maximum peak current (PN8160H/M) | IDlim | 0.75 | 0.8 | 0.85 | A | 4 | |
| Package thermal resistance RθJC (DIP-8) | RθJC | 40 | ℃/W | DIP-8 package | 3 | ||
| Turn-off/blanking: FB input open-circuit undervoltage start (FB entering PFM threshold, low) | VFB_PFM_L | 1.9 | V | 3 | |||
| FB threshold exiting PFM (high) | VFB_PFM_H | 2.1 | V | 3 | |||
| FB threshold entering intermittent mode (low) | VFB_BM_L | 1.15 | V | 3 | |||
| FB threshold exiting intermittent mode (high) | VFB_BM_H | 1.25 | V | 3 | |||
| VDD overvoltage protection delay time | Td_OVP | 80 | us | 3 | |||
| VDD restart threshold voltage | VRestart | 4 | V | 3 | |||
| Start-up transistor charging current | IVDD_CH | -1 | mA | 3 | |||
| FB short-circuit current | IFB_SHORT | 0.2 | mA | 3 | |||
| Power MOSFET off-state leakage current | IOFF | 100 | μA | Vsw =650V | 3 | ||
| On-resistance (PN8160T/R/H) | RDS(on) | 1.6 | Ω | ISW = 0.8A, TJ = 25℃ | 3 | ||
| Soft-start time | Tss | 3.2 | ms | 4 | |||
| Leading-edge blanking time | TLEB | 400 | ns | 4 | |||
| Burst-mode peak current | IDbm | 0.2 | A | 4 | |||
| Secondary rectifier short-circuit protection threshold voltage | VDSP | 1.1 | V | 4 | |||
| Secondary rectifier short-circuit protection delay | Td_DSP | 7 | Cycles | 4 | |||
| DMG overvoltage protection delay time | Td_DOVP | 7 | Cycles | 4 | |||
| Maximum clock start-up waiting time | Thold | 5 | us | 4 | |||
| Minimum duty cycle for slope compensation | Duty_Slope | 35 | % | Fosc=65kHZ | 4 | ||
| Maximum on-time | Ton_max | 12 | us | 4 | |||
| Overtemperature protection hysteresis | THYST | 30 | °C | 4 |
CAD (KiCad official)
- Symbol:
PN8160NEC-T1H - Footprint:
Package_DIP:DIP-8_W7.62mm - 3D model: DIP-8 (KiCad packages3D, STEP)
- 3D model files:
pn8160nec-t1h-etched.step/pn8160nec-t1h-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pn8160nec-t1h.step/pn8160nec-t1h.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi Chipown Micro electronics datasheet (11 pp, sha256
3a7997a0d1f57fb3, retrieved 2026-10-16, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).