component
PMZ130UNEYL
Public Made by Adomby adom
Nexperia MOSFETs, SOT-883. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownPMZ130UNEYL
Nexperia · MOSFETs · SOT-883
PMZ130UNEYL from Nexperia, in a SOT-883. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage is rated -8 V to 8 V (Table 5, Tj = 25 °C). |
| 2 | S | passive | Source of the N-channel MOSFET; source current is rated at 0.7 A maximum at Tamb = 25 °C (Table 5). |
| 3 | D | passive | Drain of the N-channel MOSFET; continuous drain current is rated at 1.8 A maximum at VGS = 4.5 V and Tamb = 25 °C (Table 5). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-883 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| drain-source voltage | VDS | 20 | V | 3 | |||
| gate-source voltage | VGS | -8 | 8 | V | Tj = 25 °C | 3 | |
| drain current | ID | 1.8 | A | VGS = 4.5 V; Tamb = 25 °C [1] | 3 | ||
| drain current | ID | 1.2 | A | VGS = 4.5 V; Tamb = 100 °C [1] | 3 | ||
| peak drain current | IDM | 8 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 | ||
| total power dissipation | Ptot | 350 | mW | Tamb = 25 °C [2] | 3 | ||
| total power dissipation | Ptot | 760 | mW | [1] | 3 | ||
| total power dissipation | Ptot | 6250 | mW | Tsp = 25 °C | 3 | ||
| junction temperature | Tj | -55 | 150 | °C | 3 | ||
| ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| source current | IS | 0.7 | A | Tamb = 25 °C [1] | 3 | ||
| thermal resistance from junction to ambient | Rth(j-a) | 315 | 360 | K/W | in free air [1] | 4 | |
| thermal resistance from junction to ambient | Rth(j-a) | 145 | 165 | K/W | in free air [2] | 4 | |
| thermal resistance from junction to solder point | Rth(j-sp) | 17 | 20 | K/W | 4 | ||
| drain-source breakdown voltage | V(BR)DSS | 20 | V | ID = 250 µA; VGS = 0 V; Tj = 25 °C | 6 | ||
| gate-source threshold voltage | VGSth | 0.45 | 0.7 | 0.95 | V | ID = 250 µA; VDS = VGS; Tj = 25 °C | 6 |
| drain leakage current | IDSS | 1 | µA | VDS = 20 V; VGS = 0 V; Tj = 25 °C | 6 | ||
| leakage current | 5 | µA | VGS = 8 V; VDS = 0 V; Tj = 25 °C | 6 | |||
| leakage current | -5 | µA | VGS = -8 V; VDS = 0 V; Tj = 25 °C | 6 | |||
| leakage current | 1 | µA | VGS = 4.5 V; VDS = 0 V; Tj = 25 °C | 6 | |||
| leakage current | -1 | µA | VGS = -4.5 V; VDS = 0 V; Tj = 25 °C | 6 | |||
| gate leakage current | IGSS | 100 | nA | VGS = 2.5 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| gate leakage current | IGSS | -100 | nA | VGS = -2.5 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| drain-source on-state resistance | RDSon | 120 | 150 | mΩ | VGS = 4.5 V; ID = 1.8 A; Tj = 25 °C | 6 | |
| drain-source on-state resistance | RDSon | 178 | 220 | mΩ | VGS = 4.5 V; ID = 1.8 A; Tj = 150 °C | 6 | |
| drain-source on-state resistance | RDSon | 160 | 220 | mΩ | VGS = 2.5 V; ID = 1.5 A; Tj = 25 °C | 6 | |
| drain-source on-state resistance | RDSon | 210 | 310 | mΩ | VGS = 1.8 V; ID = 0.25 A; Tj = 25 °C | 6 | |
| drain-source on-state resistance | RDSon | 270 | 530 | mΩ | VGS = 1.5 V; ID = 0.01 A; Tj = 25 °C | 6 | |
| source-drain voltage | VSD | 0.8 | 1.2 | V | IS = 0.7 A; VGS = 0 V; Tj = 25 °C | 6 |
CAD (KiCad official)
- Symbol:
PMZ130UNEYL - Footprint:
Package_TO_SOT_SMD:SOT-883 - 3D model: SOT-883, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 1.45 mm nominal SOT height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
pmz130uneyl-etched.step/pmz130uneyl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pmz130uneyl.step/pmz130uneyl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (14 pp, sha256
109695e25e4abd09, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).