component
PMV75UP
Public Made by Adomby adom
Nexperia MOSFETs, TO-236AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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PMV75UP
Nexperia · MOSFETs · TO-236AB
PMV75UP from Nexperia, in a TO-236AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET; the datasheet gives only the terminal function, and the gate-source voltage is limited to -12 V to 12 V (Table 5, page 3). |
| 2 | S | passive | Source terminal of the P-channel MOSFET; the datasheet gives only the terminal function, with the source current limited to -0.9 A for the source-drain diode (Table 5, page 3). |
| 3 | D | passive | Drain terminal of the P-channel MOSFET; the drain current is limited to -3.2 A at Tamb = 25 °C with t ≤ 5 s on the 6 cm² mounting pad (Table 5, page 3), and the drain-source voltage is -20 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | TO-236AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | -20 | V | 3 | |||
| Gate-source voltage | VGS | -12 | 12 | V | Tj = 25 °C | 3 | |
| Drain current | ID | -3.2 | A | VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] | 3 | ||
| Drain current | ID | -2.5 | A | VGS = -4.5 V; Tamb = 25 °C [1] | 3 | ||
| Drain current | ID | -1.6 | A | VGS = -4.5 V; Tamb = 100 °C [1] | 3 | ||
| Peak drain current | IDM | -10 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 | ||
| Total power dissipation | Ptot | 490 | mW | Tamb = 25 °C [2] | 3 | ||
| Total power dissipation | Ptot | 1000 | mW | Tamb = 25 °C [1] | 3 | ||
| Total power dissipation | Ptot | 5000 | mW | Tsp = 25 °C | 3 | ||
| Junction temperature | Tj | -55 | 150 | °C | 3 | ||
| Ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Source current | IS | -0.9 | A | Tamb = 25 °C [1] | 3 | ||
| Thermal resistance from junction to ambient | Rth(j-a) | 217 | 255 | K/W | in free air [1]: FR4 PCB, single-sided copper, standard footprint | 4 | |
| Thermal resistance from junction to ambient | Rth(j-a) | 105 | 124 | K/W | in free air [2]: FR4 PCB, mounting pad for drain 6 cm2 | 4 | |
| Thermal resistance from junction to ambient | Rth(j-a) | 73 | 86 | K/W | in free air; t ≤ 5 s [2]: FR4 PCB, mounting pad for drain 6 cm2 | 4 | |
| Thermal resistance from junction to solder point | Rth(j-sp) | 20 | 25 | K/W | 4 | ||
| Drain-source breakdown voltage | V(BR)DSS | -20 | V | ID = -250 µA; VGS = 0 V; Tj = 25 °C | 6 | ||
| Gate-source threshold voltage | VGSth | -0.47 | -0.68 | -0.9 | V | ID = -250 µA; VDS = VGS; Tj = 25 °C | 6 |
| Drain leakage current | IDSS | -1 | µA | VDS = -20 V; VGS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | 100 | nA | VGS = 12 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | -100 | nA | VGS = -12 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Drain-source on-state resistance | RDSon | 77 | 102 | mΩ | VGS = -4.5 V; ID = -2.5 A; Tj = 25 °C | 6 | |
| Drain-source on-state resistance | RDSon | 110 | 146 | mΩ | VGS = -4.5 V; ID = -2.4 A; Tj = 150 °C | 6 | |
| Drain-source on-state resistance | RDSon | 95 | 125 | mΩ | VGS = -2.5 V; ID = -2.2 A; Tj = 25 °C | 6 | |
| Drain-source on-state resistance | RDSon | 120 | 156 | mΩ | VGS = -1.8 V; ID = -1 A; Tj = 25 °C | 6 | |
| Total gate charge | QG(tot) | 5 | 7.5 | nC | VDS = -10 V; ID = -2.5 A; VGS = -4.5 V; Tj = 25 °C | 6 | |
| Source-drain voltage | VSD | -0.8 | -1.2 | V | IS = -0.9 A; VGS = 0 V; Tj = 25 °C | 6 |
CAD (KiCad official)
- Symbol:
PMV75UP - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: TO-236AB (KiCad packages3D, STEP)
- 3D model files:
pmv75up-etched.step/pmv75up-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pmv75up.step/pmv75up.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (15 pp, sha256
a1be6407f08aaac8, retrieved 2026-10-14, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PMV75UP
**Nexperia** · MOSFETs · TO-236AB
PMV75UP from Nexperia, in a TO-236AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET; the datasheet gives only the terminal function, and the gate-source voltage is limited to -12 V to 12 V (Table 5, page 3). |
| 2 | S | passive | Source terminal of the P-channel MOSFET; the datasheet gives only the terminal function, with the source current limited to -0.9 A for the source-drain diode (Table 5, page 3). |
| 3 | D | passive | Drain terminal of the P-channel MOSFET; the drain current is limited to -3.2 A at Tamb = 25 °C with t ≤ 5 s on the 6 cm² mounting pad (Table 5, page 3), and the drain-source voltage is -20 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | TO-236AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | | | -20 | V | | 3 |
| Gate-source voltage | VGS | -12 | | 12 | V | Tj = 25 °C | 3 |
| Drain current | ID | | | -3.2 | A | VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] | 3 |
| Drain current | ID | | | -2.5 | A | VGS = -4.5 V; Tamb = 25 °C [1] | 3 |
| Drain current | ID | | | -1.6 | A | VGS = -4.5 V; Tamb = 100 °C [1] | 3 |
| Peak drain current | IDM | | | -10 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 |
| Total power dissipation | Ptot | | | 490 | mW | Tamb = 25 °C [2] | 3 |
| Total power dissipation | Ptot | | | 1000 | mW | Tamb = 25 °C [1] | 3 |
| Total power dissipation | Ptot | | | 5000 | mW | Tsp = 25 °C | 3 |
| Junction temperature | Tj | -55 | | 150 | °C | | 3 |
| Ambient temperature | Tamb | -55 | | 150 | °C | | 3 |
| Storage temperature | Tstg | -65 | | 150 | °C | | 3 |
| Source current | IS | | | -0.9 | A | Tamb = 25 °C [1] | 3 |
| Thermal resistance from junction to ambient | Rth(j-a) | | 217 | 255 | K/W | in free air [1]: FR4 PCB, single-sided copper, standard footprint | 4 |
| Thermal resistance from junction to ambient | Rth(j-a) | | 105 | 124 | K/W | in free air [2]: FR4 PCB, mounting pad for drain 6 cm2 | 4 |
| Thermal resistance from junction to ambient | Rth(j-a) | | 73 | 86 | K/W | in free air; t ≤ 5 s [2]: FR4 PCB, mounting pad for drain 6 cm2 | 4 |
| Thermal resistance from junction to solder point | Rth(j-sp) | | 20 | 25 | K/W | | 4 |
| Drain-source breakdown voltage | V(BR)DSS | -20 | | | V | ID = -250 µA; VGS = 0 V; Tj = 25 °C | 6 |
| Gate-source threshold voltage | VGSth | -0.47 | -0.68 | -0.9 | V | ID = -250 µA; VDS = VGS; Tj = 25 °C | 6 |
| Drain leakage current | IDSS | | | -1 | µA | VDS = -20 V; VGS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS | | | 100 | nA | VGS = 12 V; VDS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS | | | -100 | nA | VGS = -12 V; VDS = 0 V; Tj = 25 °C | 6 |
| Drain-source on-state resistance | RDSon | | 77 | 102 | mΩ | VGS = -4.5 V; ID = -2.5 A; Tj = 25 °C | 6 |
| Drain-source on-state resistance | RDSon | | 110 | 146 | mΩ | VGS = -4.5 V; ID = -2.4 A; Tj = 150 °C | 6 |
| Drain-source on-state resistance | RDSon | | 95 | 125 | mΩ | VGS = -2.5 V; ID = -2.2 A; Tj = 25 °C | 6 |
| Drain-source on-state resistance | RDSon | | 120 | 156 | mΩ | VGS = -1.8 V; ID = -1 A; Tj = 25 °C | 6 |
| Total gate charge | QG(tot) | | 5 | 7.5 | nC | VDS = -10 V; ID = -2.5 A; VGS = -4.5 V; Tj = 25 °C | 6 |
| Source-drain voltage | VSD | | -0.8 | -1.2 | V | IS = -0.9 A; VGS = 0 V; Tj = 25 °C | 6 |
## CAD (KiCad official)
- Symbol: `PMV75UP`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: TO-236AB (KiCad packages3D, STEP)
- 3D model files: `pmv75up-etched.step` / `pmv75up-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pmv75up.step` / `pmv75up.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://assets.nexperia.com/documents/data-sheet/PMV75UP.pdf) (15 pp, sha256 `a1be6407f08aaac8`, retrieved 2026-10-14, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/pmv75up-datasheet.pdf)