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PMV45EN2R

Public Made by Adom

by adom

Nexperia MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PMV45EN2R

Nexperia · MOSFETs · SOT-23

PMV45EN2R from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; the datasheet gives no pin-specific voltage or current limit for this pin, only the gate-source voltage rating of ±20 V in the limiting values.
2 S passive Source terminal of the N-channel MOSFET; the datasheet gives no pin-specific limit for this pin beyond the source current rating of 1 A (IS, Tamb = 25 °C).
3 D passive Drain terminal of the N-channel MOSFET; the datasheet gives no pin-specific limit for this pin beyond the 30 V drain-source voltage rating (VDS).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 30 V 3
Gate-source voltage VGS -20 20 V Tj = 25 °C 3
Drain current ID 5.1 A VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] 3
Drain current ID 4.1 A VGS = 10 V; Tamb = 25 °C [1] 3
Drain current ID 2.6 A VGS = 10 V; Tamb = 100 °C [1] 3
Peak drain current IDM 16 A Tamb = 25 °C; single pulse; tp ≤ 10 µs 3
Total power dissipation Ptot 510 mW Tamb = 25 °C; footnote [2] (standard footprint) 3
Total power dissipation Ptot 1115 mW footnote [1] (FR4 PCB, mounting pad for drain 6 cm2) 3
Total power dissipation Ptot 5000 mW Tsp = 25 °C 3
Junction temperature Tj -55 150 °C 3
Ambient temperature Tamb -55 150 °C 3
Storage temperature Tstg -65 150 °C 3
Source current IS 1 A Tamb = 25 °C [1] 3
Thermal resistance from junction to ambient Rth(j-a) 209 246 K/W in free air; footnote [1] (standard footprint) 4
Thermal resistance from junction to ambient Rth(j-a) 95 112 K/W footnote [2] (mounting pad for drain 6 cm2) 4
Thermal resistance from junction to ambient Rth(j-a) 62 73 K/W in free air; t ≤ 5 s [2] 4
Thermal resistance from junction to solder point Rth(j-sp) 20 25 K/W 4
Drain-source breakdown voltage V(BR)DSS 30 V ID = 250 µA; VGS = 0 V; Tj = 25 °C 6
Gate-source threshold voltage VGSth 1 1.5 2 V ID = 250 µA; VDS = VGS; Tj = 25 °C 6
Drain leakage current IDSS 1 µA VDS = 30 V; VGS = 0 V; Tj = 25 °C 6
Gate leakage current (positive) IGSS 100 nA VGS = 20 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current (negative) IGSS -100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C 6
Drain-source on-state resistance RDSon 35 42 mΩ VGS = 10 V; ID = 4.1 A; Tj = 25 °C 6
Drain-source on-state resistance RDSon 55 66 mΩ VGS = 10 V; ID = 4.1 A; Tj = 150 °C 6
Drain-source on-state resistance RDSon 43 54 mΩ VGS = 4.5 V; ID = 3.6 A; Tj = 25 °C 6
Total gate charge QG(tot) 3.6 6.3 nC VDS = 15 V; ID = 3.2 A; VGS = 10 V; Tj = 25 °C 6
Source-drain voltage VSD 0.8 1.2 V IS = 1 A; VGS = 0 V; Tj = 25 °C 6

CAD (KiCad official)

  • Symbol: PMV45EN2R
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pmv45en2r-etched.step / pmv45en2r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmv45en2r.step / pmv45en2r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (15 pp, sha256 15fd7a61357a8d1d, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF