# PMV45EN2R-HXY

**HXY MOSFET** · MOSFETs · SOT-23

PMV45EN2R-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel enhancement MOSFET; gate-source voltage is rated ±20 V and the device is specified for gate drive down to 2.5 V. |
| 2 | D | passive | Drain terminal; the drain-source voltage is rated 30 V and the continuous drain current is rated 4 A. |
| 3 | S | passive | Source terminal, the reference for VDS and VGS; the body diode is rated 4 A continuous and 16 A pulsed. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | 4 | A |  | 1 |
| Drain Current-Pulsed | IDM |  |  | 16.4 | A | Note 1 | 1 |
| Maximum Power Dissipation | PD |  |  | 1 | W |  | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 125 | ℃/W | Note 2 | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 |  |  | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=30V, VGS=0V | 2 |
| Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS= ±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 29 | 38 | mΩ | VGS=10V, ID=4A | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 45 | 65 | mΩ | VGS=4.5V, ID=3A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS |  |  | 4 | A |  | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM |  |  | 16 | A |  | 2 |
| Drain to Source Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=4A | 2 |

## CAD (KiCad official)

- Symbol: `PMV45EN2R-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `pmv45en2r-hxy-etched.step` / `pmv45en2r-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pmv45en2r-hxy.step` / `pmv45en2r-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758125444707299328) (6 pp, sha256 `45ab64cb210b04a1`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/pmv45en2r-hxy-datasheet.pdf)