component
PMV42ENER
Public Made by Adomby adom
Nexperia MOSFETs, SOT-23. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+7−4@@ -32,19 +32,19 @@ "number": "1", "name": "G", "type": "input",- "description": "Gate. Insulated control terminal of the N-channel MOSFET. V_GS(th) = 1.0 V min / 1.4 V typ / 2.0 V max (logic-level). Absolute maximum V_GS = \u00b120 V."+ "description": "Gate. Insulated control terminal of the N-channel MOSFET. V_GS(th) = 1.0 V min / 1.4 V typ / 2.0 V max (logic-level). Absolute maximum V_GS = ±20 V." }, { "number": "2", "name": "S", "type": "passive",- "description": "Source. Current-return terminal of the N-channel MOSFET, typically tied to the load-return / ground rail in a low-side switch configuration. Also serves as the anode of the intrinsic body diode (V_SD \u2248 0.8 V typ at I_S = 1 A)."+ "description": "Source. Current-return terminal of the N-channel MOSFET, typically tied to the load-return / ground rail in a low-side switch configuration. Also serves as the anode of the intrinsic body diode (V_SD ≈ 0.8 V typ at I_S = 1 A)." }, { "number": "3", "name": "D", "type": "passive",- "description": "Drain. High-side power terminal of the N-channel MOSFET. V_DS max = 30 V, continuous I_D up to 4.4 A (T_amb = 25 \u00b0C), peak I_DM = 18 A. R_DS(on) typ 29 m\u03a9 at V_GS = 10 V."+ "description": "Drain. High-side power terminal of the N-channel MOSFET. V_DS max = 30 V, continuous I_D up to 4.4 A (T_amb = 25 °C), peak I_DM = 18 A. R_DS(on) typ 29 mΩ at V_GS = 10 V." } ], "provenance": {@@ -114,5 +114,8 @@ "docs/pmv42ener-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }