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Contents

README

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PMV42ENER

Nexperia · MOSFETs · SOT-23

PMV42ENER from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated control terminal of the N-channel MOSFET. V_GS(th) = 1.0 V min / 1.4 V typ / 2.0 V max (logic-level). Absolute maximum V_GS = ±20 V.
2 S passive Source. Current-return terminal of the N-channel MOSFET, typically tied to the load-return / ground rail in a low-side switch configuration. Also serves as the anode of the intrinsic body diode (V_SD ≈ 0.8 V typ at I_S = 1 A).
3 D passive Drain. High-side power terminal of the N-channel MOSFET. V_DS max = 30 V, continuous I_D up to 4.4 A (T_amb = 25 °C), peak I_DM = 18 A. R_DS(on) typ 29 mΩ at V_GS = 10 V.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Ordering variants

Same part, different packaging or reel option.

  • PMV42ENER

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 30 V 3
Gate-source voltage VGS -20 20 V Tj = 25 °C 3
Drain current ID 5.1 A VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] 3
Drain current ID 4.4 A VGS = 10 V; Tamb = 25 °C [1] 3
Drain current ID 2.7 A VGS = 10 V; Tamb = 100 °C [1] 3
Peak drain current IDM 18 A Tamb = 25 °C; single pulse; tp ≤ 10 µs 3
Total power dissipation Ptot 500 mW Tamb = 25 °C [2] 3
Total power dissipation Ptot 1.04 W [1] FR4 PCB, mounting pad for drain 6 cm2 3
Total power dissipation Ptot 5 W Tsp = 25 °C 3
Junction temperature Tj -55 150 °C 3
Ambient temperature Tamb -55 150 °C 3
Storage temperature Tstg -65 150 °C 3
Source current IS 1 A Tamb = 25 °C [1] 3
Drain-source breakdown voltage V(BR)DSS 30 V ID = 250 µA; VGS = 0 V; Tj = 25 °C 7
Gate-source threshold voltage VGSth 1 1.4 2 V ID = 250 µA; VDS = VGS; Tj = 25 °C 7
Drain leakage current IDSS 1 µA VDS = 30 V; VGS = 0 V; Tj = 25 °C 7
Drain leakage current IDSS 10 µA VGS = 16 V; VDS = 0 V; Tj = 25 °C 7
Drain leakage current IDSS -10 µA VGS = -16 V; VDS = 0 V; Tj = 25 °C 7
Gate leakage current IGSS 100 nA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C 7
Gate leakage current IGSS -100 nA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C 7
Drain-source on-state resistance RDSon 29 36 mΩ VGS = 10 V; ID = 4.4 A; Tj = 25 °C 7
Drain-source on-state resistance RDSon 46 57 mΩ VGS = 10 V; ID = 4.4 A; Tj = 150 °C 7
Drain-source on-state resistance RDSon 42 54 mΩ VGS = 4.5 V; ID = 3.5 A; Tj = 25 °C 7
Total gate charge QG(tot) 5.5 9 nC VDS = 15 V; ID = 4.4 A; VGS = 10 V; Tj = 25 °C 7
Source-drain voltage VSD 0.8 1.2 V IS = 1 A; VGS = 0 V; Tj = 25 °C 7
Thermal resistance from junction to ambient Rth(j-a) 218 250 K/W in free air [1] 5
Thermal resistance from junction to ambient Rth(j-a) 105 120 K/W in free air [2] 5
Thermal resistance from junction to ambient Rth(j-a) 72 83 K/W in free air; t ≤ 5 s [2] 5
Thermal resistance from junction to solder point Rth(j-sp) 20 25 K/W 5

CAD (KiCad official)

  • Symbol: PMV42ENER
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pmv42ener-etched.step / pmv42ener-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmv42ener.step / pmv42ener.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (17 pp, sha256 29cc4b3136a8da15, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF