# PMV40UN2R-HXY

**HXY MOSFET** · MOSFETs · SOT-23

PMV40UN2R-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the MOSFET, rated for a gate-source voltage of ±12 V absolute maximum. |
| 2 | D | passive | Drain terminal, rated for a drain-source voltage of 30 V and a continuous drain current of 5 A. |
| 3 | S | passive | Source terminal, the reference for the gate-source voltage, with a gate-source rating of ±12 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS=0V , ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 42 | mΩ | VGS=10V , ID=3A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 48 | mΩ | VGS=4.5V , ID=2A | 2 |
| Gate Threshold Voltage | VGS(th) | 0.4 |  | 1.2 | V | VGS=VDS , ID =250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=16V , VGS=0V , TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 5 | uA | VDS=16V , VGS=0V , TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±12V , VDS=0V | 2 |
| Continuous Source Current | IS |  |  | 3.6 | A | VG=VD=0V , Force Current | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V , IS=1A , TJ=25℃ | 2 |
| Drain-Source Voltage | VDS |  |  | 30 | V | TA=25℃ | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V | TA=25℃ | 1 |
| Drain Current-Continuous | ID |  |  | 5 | A | TA=25℃ | 1 |
| Drain Current-Pulsed | IDM |  |  | 14.4 | A | TA=25℃, Note 1 | 1 |
| Maximum Power Dissipation | PD |  |  | 1 | W | TA=25℃ | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 125 | ℃/W | Note 2 | 1 |

## CAD (KiCad official)

- Symbol: `PMV40UN2R-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `pmv40un2r-hxy-etched.step` / `pmv40un2r-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pmv40un2r-hxy.step` / `pmv40un2r-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/pmv40un2r-hxy-datasheet.pdf) (6 pp, sha256 `75880116fc1f5025`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/pmv40un2r-hxy-datasheet.pdf)