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PMV37ENEA

Public Made by Adom

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Leiditech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Datasheet

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Contents

README

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PMV37ENEA

Leiditech · MOSFETs · SOT-23

PMV37ENEA from Leiditech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage rated ±20 V, threshold 1.2 to 2.5 V (VGS=VDS, ID=250uA), with RDS(ON) specified at VGS=4.5 V and 10 V.
2 S passive Source; continuous source current (body diode) is 2.3 A and pulsed source current is 9.2 A.
3 D passive Drain; drain-source voltage rated 60 V, continuous drain current 3.0 A at TA=25℃ and pulsed drain current 9.2 A.

Key specifications

Parameter Value
Manufacturer Leiditech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Continuous Drain Current ID@TA=25℃ 3 A VGS @ 10V 1
Continuous Drain Current ID@TA=70℃ 1.8 A VGS @ 10V 1
Pulsed Drain Current IDM 9.2 A 1
Total Power Dissipation PD@TA=25℃ 1 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 125 ℃/W 1
Thermal Resistance Junction-Case RθJC 80 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 80 100 mΩ VGS=10V , ID=2A 2
Static Drain-Source On-Resistance RDS(ON) 85 110 mΩ VGS=4.5V , ID=1A 2
Gate Threshold Voltage VGS(th) 1.2 2.5 V VGS=VDS , ID =250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=48V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=48V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Total Gate Charge (4.5V) Qg 5 7 nC VDS=48V , VGS=4.5V , ID=2A 2
Gate-Source Charge Qgs 1.68 2.4 nC VDS=48V , VGS=4.5V , ID=2A 2
Gate-Drain Charge Qgd 1.9 2.7 nC VDS=48V , VGS=4.5V , ID=2A 2
Turn-On Delay Time Td(on) 1.6 3.2 ns VDD=30V , VGS=10V , RG=3.3 , ID=2A 2
Rise Time Tr 7.2 13 ns VDD=30V , VGS=10V , RG=3.3 , ID=2A 2
Turn-Off Delay Time Td(off) 25 50 ns VDD=30V , VGS=10V , RG=3.3 , ID=2A 2
Fall Time Tf 14.4 28.8 ns VDD=30V , VGS=10V , RG=3.3 , ID=2A 2
Input Capacitance Ciss 511 715 pF VDS=15V , VGS=0V , f=1MHz 2
Output Capacitance Coss 38 53 pF VDS=15V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 25 35 pF VDS=15V , VGS=0V , f=1MHz 2
Continuous Source Current IS 2.3 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM 9.2 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2
BVDSS Temperature Coefficient △BVDSS/△TJ 0.054 V/℃ Reference to 25℃ , ID=1mA 2
VGS(th) Temperature Coefficient △VGS(th) -4.96 mV/℃ 2
Forward Transconductance gfs 13 S VDS=5V , ID=2A 2
Reverse Recovery Time trr 9.7 nS IF=2A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 5.8 nC IF=2A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: PMV37ENEA
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pmv37enea-etched.step / pmv37enea-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmv37enea.step / pmv37enea.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Leiditech datasheet (5 pp, sha256 10564f3c01083a40, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF