# PMV30XPEA-HXY

**HXY MOSFET** · MOSFETs · SOT-23

PMV30XPEA-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; P-channel gate drive with VGS rated ±10V, VGS(th) -0.35V to -0.9V, and usable down to -1.8V, with an ESD protection diode (1500V HBM). |
| 2 | S | passive | Source of the P-channel MOSFET, connected to the positive supply side in a load switch, with continuous drain current rated -5A. |
| 3 | D | passive | Drain of the P-channel MOSFET, with VDS rated -20V, continuous ID -5A and pulsed IDM -30A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 |  |  | V | VGS=0V, ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=-20V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -10 |  | 10 | μA | VGS=±10V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -0.35 | -0.55 | -0.9 | V | VDS=VGS, ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 30 | 40 | mΩ | VGS=-4.5V, ID=-4A | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 44 | 60 | mΩ | VGS=-2.5V, ID=-4A | 2 |
| Forward Transconductance | gFS | 8 |  |  | S | VDS=-5V, ID=-4A | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V, IS=-4A | 2 |
| Diode Forward Current | IS |  |  | -4 | A |  | 2 |
| Drain-Source Voltage | VDS |  |  | -20 | V | TA=25℃ | 1 |
| Gate-Source Voltage | VGS | -10 |  | 10 | V | TA=25℃ | 1 |
| Drain Current-Continuous | ID |  |  | -5 | A | TA=25℃ | 1 |
| Drain Current-Pulsed | IDM |  |  | -30 | A | Note 1 | 1 |
| Maximum Power Dissipation | PD |  |  | 1.4 | W | TA=25℃ | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 89.3 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |

## CAD (KiCad official)

- Symbol: `PMV30XPEA-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `pmv30xpea-hxy-etched.step` / `pmv30xpea-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pmv30xpea-hxy.step` / `pmv30xpea-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758118640682049536) (7 pp, sha256 `7ad649aa5305d1c2`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/pmv30xpea-hxy-datasheet.pdf)