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PMV250EPEA215

Nexperia · MOSFETs · SOT-23(TO-236AB)

PMV250EPEA215 from Nexperia, in a SOT-23(TO-236AB). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the P-channel MOSFET; gate-source voltage is limited to -20 V to 20 V at Tj = 25 °C.
2 S passive Source terminal of the MOSFET; source current IS is limited to -0.9 A at Tamb = 25 °C.
3 D passive Drain terminal of the MOSFET; drain-source voltage VDS is limited to -40 V and drain current ID to -1.5 A at VGS = -10 V, Tamb = 25 °C.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23(TO-236AB)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
drain-source voltage VDS -40 V 3
gate-source voltage VGS -20 20 V Tj = 25 °C 3
drain current ID -1.5 A VGS = -10 V; Tamb = 25 °C 3
drain current ID -1 A VGS = -10 V; Tamb = 100 °C 3
peak drain current IDM -6 A Tamb = 25 °C; single pulse; tp ≤ 10 µs 3
non-repetitive drain-source avalanche energy EDS(AL)S 5.5 mJ Tj(init) = 25 °C; ID = -0.26 A; DUT in avalanche (unclamped) 3
total power dissipation Ptot 480 mW Tamb = 25 °C 3
total power dissipation Ptot 890 mW 3
total power dissipation Ptot 6250 mW Tsp = 25 °C 3
junction temperature Tj -55 150 °C 3
ambient temperature Tamb -55 150 °C 3
storage temperature Tstg -65 150 °C 3
source current IS -0.9 A Tamb = 25 °C 3
electrostatic discharge voltage VESD 1000 V HBM; measured between all pins 3
thermal resistance from junction to ambient Rth(j-a) 230 260 K/W in free air; FR4 PCB, standard footprint 4
thermal resistance from junction to ambient Rth(j-a) 120 140 K/W in free air; FR4 PCB, mounting pad for drain 6 cm2 4
thermal resistance from junction to solder point Rth(j-sp) 15 20 K/W 5
drain-source breakdown voltage V(BR)DSS -40 V ID = -250 µA; VGS = 0 V; Tj = 25 °C 6
gate-source threshold voltage VGSth -1 -1.7 -2.5 V ID = -250 µA; VDS = VGS; Tj = 25 °C 6
drain leakage current IDSS -1 µA VDS = -40 V; VGS = 0 V; Tj = 25 °C 6
drain leakage current IDSS -20 µA VDS = -40 V; VGS = 0 V; Tj = 150 °C 6
gate leakage current IGSS 10 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C 6
gate leakage current IGSS -10 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C 6
drain-source on-state resistance RDSon 180 240 mΩ VGS = -10 V; ID = -1.3 A; Tj = 25 °C 6
drain-source on-state resistance RDSon 300 400 mΩ VGS = -10 V; ID = -1.3 A; Tj = 150 °C 6
drain-source on-state resistance RDSon 220 300 mΩ VGS = -4.5 V; ID = -0.8 A; Tj = 25 °C 6
total gate charge QG(tot) 4.7 6 nC VDS = -20 V; ID = -1.3 A; VGS = -10 V; Tj = 25 °C 6
input capacitance Ciss 293 450 pF VDS = -20 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C 6
turn-on delay time td(on) 4 6 ns VDS = -20 V; ID = -1.3 A; VGS = -10 V; RG(ext) = 15 Ω; Tj = 25 °C 6
turn-off delay time td(off) 26 39 ns VDS = -20 V; ID = -1.3 A; VGS = -10 V; RG(ext) = 15 Ω; Tj = 25 °C 6
source-drain voltage VSD -0.8 -1.2 V IS = -0.86 A; VGS = 0 V; Tj = 25 °C 6

CAD (KiCad official)

  • Symbol: PMV250EPEA215
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236AB) (KiCad packages3D, STEP)
  • 3D model files: pmv250epea215-etched.step / pmv250epea215-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmv250epea215.step / pmv250epea215.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (16 pp, sha256 abcc7644601ce902, retrieved 2026-10-29, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF