component
PMV250EPEA215
Public Made by Adomby adom
Nexperia MOSFETs, SOT-23(TO-236AB). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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PMV250EPEA215
Nexperia · MOSFETs · SOT-23(TO-236AB)
PMV250EPEA215 from Nexperia, in a SOT-23(TO-236AB). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET; gate-source voltage is limited to -20 V to 20 V at Tj = 25 °C. |
| 2 | S | passive | Source terminal of the MOSFET; source current IS is limited to -0.9 A at Tamb = 25 °C. |
| 3 | D | passive | Drain terminal of the MOSFET; drain-source voltage VDS is limited to -40 V and drain current ID to -1.5 A at VGS = -10 V, Tamb = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23(TO-236AB) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| drain-source voltage | VDS | -40 | V | 3 | |||
| gate-source voltage | VGS | -20 | 20 | V | Tj = 25 °C | 3 | |
| drain current | ID | -1.5 | A | VGS = -10 V; Tamb = 25 °C | 3 | ||
| drain current | ID | -1 | A | VGS = -10 V; Tamb = 100 °C | 3 | ||
| peak drain current | IDM | -6 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 | ||
| non-repetitive drain-source avalanche energy | EDS(AL)S | 5.5 | mJ | Tj(init) = 25 °C; ID = -0.26 A; DUT in avalanche (unclamped) | 3 | ||
| total power dissipation | Ptot | 480 | mW | Tamb = 25 °C | 3 | ||
| total power dissipation | Ptot | 890 | mW | 3 | |||
| total power dissipation | Ptot | 6250 | mW | Tsp = 25 °C | 3 | ||
| junction temperature | Tj | -55 | 150 | °C | 3 | ||
| ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| source current | IS | -0.9 | A | Tamb = 25 °C | 3 | ||
| electrostatic discharge voltage | VESD | 1000 | V | HBM; measured between all pins | 3 | ||
| thermal resistance from junction to ambient | Rth(j-a) | 230 | 260 | K/W | in free air; FR4 PCB, standard footprint | 4 | |
| thermal resistance from junction to ambient | Rth(j-a) | 120 | 140 | K/W | in free air; FR4 PCB, mounting pad for drain 6 cm2 | 4 | |
| thermal resistance from junction to solder point | Rth(j-sp) | 15 | 20 | K/W | 5 | ||
| drain-source breakdown voltage | V(BR)DSS | -40 | V | ID = -250 µA; VGS = 0 V; Tj = 25 °C | 6 | ||
| gate-source threshold voltage | VGSth | -1 | -1.7 | -2.5 | V | ID = -250 µA; VDS = VGS; Tj = 25 °C | 6 |
| drain leakage current | IDSS | -1 | µA | VDS = -40 V; VGS = 0 V; Tj = 25 °C | 6 | ||
| drain leakage current | IDSS | -20 | µA | VDS = -40 V; VGS = 0 V; Tj = 150 °C | 6 | ||
| gate leakage current | IGSS | 10 | µA | VGS = 20 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| gate leakage current | IGSS | -10 | µA | VGS = -20 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| drain-source on-state resistance | RDSon | 180 | 240 | mΩ | VGS = -10 V; ID = -1.3 A; Tj = 25 °C | 6 | |
| drain-source on-state resistance | RDSon | 300 | 400 | mΩ | VGS = -10 V; ID = -1.3 A; Tj = 150 °C | 6 | |
| drain-source on-state resistance | RDSon | 220 | 300 | mΩ | VGS = -4.5 V; ID = -0.8 A; Tj = 25 °C | 6 | |
| total gate charge | QG(tot) | 4.7 | 6 | nC | VDS = -20 V; ID = -1.3 A; VGS = -10 V; Tj = 25 °C | 6 | |
| input capacitance | Ciss | 293 | 450 | pF | VDS = -20 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 6 | |
| turn-on delay time | td(on) | 4 | 6 | ns | VDS = -20 V; ID = -1.3 A; VGS = -10 V; RG(ext) = 15 Ω; Tj = 25 °C | 6 | |
| turn-off delay time | td(off) | 26 | 39 | ns | VDS = -20 V; ID = -1.3 A; VGS = -10 V; RG(ext) = 15 Ω; Tj = 25 °C | 6 | |
| source-drain voltage | VSD | -0.8 | -1.2 | V | IS = -0.86 A; VGS = 0 V; Tj = 25 °C | 6 |
CAD (KiCad official)
- Symbol:
PMV250EPEA215 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236AB) (KiCad packages3D, STEP)
- 3D model files:
pmv250epea215-etched.step/pmv250epea215-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pmv250epea215.step/pmv250epea215.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (16 pp, sha256
abcc7644601ce902, retrieved 2026-10-29, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).