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PMV240SPR

Public Made by Adom

by adom

Nexperia MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PMV240SPR

Nexperia · MOSFETs · SOT-23

PMV240SPR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the P-channel MOSFET; gate-source voltage is limited to -25 V to 25 V (Tj = 25 °C).
2 S passive Source terminal of the P-channel MOSFET; source current IS is limited to -1.4 A at Tamb = 25 °C.
3 D passive Drain terminal of the P-channel MOSFET; drain-source voltage VDS is limited to -100 V, with continuous drain current ID of -1.2 A at Tamb = 25 °C (VGS = -10 V).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS -100 V 3
Gate-source voltage VGS -25 25 V Tj = 25 °C 3
Drain current ID -1.2 A VGS = -10 V; Tamb = 25 °C [1] 3
Drain current ID -0.8 A VGS = -10 V; Tamb = 100 °C [1] 3
Peak drain current IDM -5 A Tamb = 25 °C; single pulse; tp ≤ 10 µs 3
Total power dissipation Ptot 710 mW Tamb = 25 °C [2] 3
Total power dissipation Ptot 1.3 W [1] 3
Total power dissipation Ptot 8.3 W Tsp = 25 °C 3
Junction temperature Tj -55 175 °C 3
Ambient temperature Tamb -55 175 °C 3
Storage temperature Tstg -65 175 °C 3
Source current IS -1.4 A Tamb = 25 °C [1] 3
Electrostatic discharge voltage VESD 400 V HBM; measured between all pins [3] 3
Non-repetitive drain-source avalanche energy EDS(AL)S 24 mJ Tj(init) = 25 °C; ID = -0.5 A; DUT in avalanche (unclamped) 3
Drain-source breakdown voltage V(BR)DSS -100 V ID = -250 µA; VGS = 0 V; Tj = 25 °C 6
Gate-source threshold voltage VGSth -2 -2.9 -4 V ID = -250 µA; VDS = VGS; Tj = 25 °C 6
Drain leakage current IDSS -1 µA VDS = -100 V; VGS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS -100 nA VGS = -25 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS 100 nA VGS = 25 V; VDS = 0 V; Tj = 25 °C 6
Drain-source on-state resistance RDSon 280 365 mΩ VGS = -10 V; ID = -1.2 A; Tj = 25 °C 6
Drain-source on-state resistance RDSon 644 840 mΩ VGS = -10 V; ID = -1.2 A; Tj = 175 °C 6
Drain-source on-state resistance RDSon 300 435 mΩ VGS = -6 V; ID = -1.1 A; Tj = 25 °C 6
Source-drain voltage VSD -0.8 -1.2 V IS = -1.4 A; VGS = 0 V; Tj = 25 °C 6
Thermal resistance from junction to ambient (standard footprint, free air) Rth(j-a) 175 210 K/W in free air; FR4 PCB, standard footprint [1] 5
Thermal resistance from junction to ambient (mounting pad for drain 6 cm2) Rth(j-a) 95 115 K/W FR4 PCB, mounting pad for drain 6 cm2 [2] 5
Thermal resistance from junction to solder point Rth(j-sp) 13 18 K/W 5

CAD (KiCad official)

  • Symbol: PMV240SPR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pmv240spr-etched.step / pmv240spr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmv240spr.step / pmv240spr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (15 pp, sha256 3148b534b19640b1, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF