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PMV240SPR-VB
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VBsemi Elec MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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PMV240SPR-VB
VBsemi Elec · MOSFETs · SOT-23
PMV240SPR-VB from VBsemi Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated ±20 V per the absolute maximum ratings. |
| 2 | S | passive | Source terminal; continuous source current (diode conduction) is rated −1.4 A for 5 s and −1.0 A in steady state. |
| 3 | D | passive | Drain terminal; drain-source voltage is rated −100 V and continuous drain current is rated −1.65 A (5 s) and −1.5 A (steady state) at TA = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -1.65 | A | TA = 25 °C, 5 s, TJ = 150 °C | 1 | ||
| Continuous Drain Current | ID | -1.5 | A | TA = 25 °C, steady state, TJ = 150 °C | 1 | ||
| Continuous Drain Current | ID | -1.55 | A | TA = 70 °C, 5 s, TJ = 150 °C | 1 | ||
| Continuous Drain Current | ID | -1.4 | A | TA = 70 °C, steady state, TJ = 150 °C | 1 | ||
| Pulsed Drain Current | IDM | -3 | A | 1 | |||
| Continuous Source Current (Diode Conduction) | IS | -1.4 | A | 5 s | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | -1 | A | steady state | 1 | ||
| Single Pulse Avalanche Current | IAS | 4.5 | A | L = 1.0 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 1.01 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 2 | W | TA = 25 °C, 5 s | 1 | ||
| Maximum Power Dissipation | PD | 0.85 | W | TA = 25 °C, steady state | 1 | ||
| Maximum Power Dissipation | PD | 1 | W | TA = 70 °C, 5 s | 1 | ||
| Maximum Power Dissipation | PD | 0.58 | W | TA = 70 °C, steady state | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | -100 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| Gate-Threshold Voltage | VGS(th) | -1 | -3 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -100 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -10 | µA | VDS = -100 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | -1.6 | A | VDS ≤ -15 V, VGS = -10 V | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 0.5 | Ω | VGS = -10 V, ID = -0.5 A | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 0.56 | Ω | VGS = -6.0 V, ID = -0.5 A | 2 | ||
| Diode Forward Voltage | VSD | 0.7 | -1.2 | V | IS = -1.0 A, VGS = 0 V | 2 | |
| Total Gate Charge | Qg | 7.7 | 12 | nC | VDS = -50 V, VGS = 10 V, ID ≅ -0.5 A | 2 | |
| Turn-On Delay Time | td(on) | 7 | 11 | ns | ID ≅ -1.0 A, VGEN = -10 V, VDD = -50 V, RL = 75 Ω, Rg = 6 Ω | 2 | |
| Rise Time | tr | 11 | 17 | ns | ID ≅ -1.0 A, VGEN = -10 V, VDD = -50 V, RL = 75 Ω, Rg = 6 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 16 | 25 | ns | ID ≅ -1.0 A, VGEN = -10 V, VDD = -50 V, RL = 75 Ω, Rg = 6 Ω | 2 | |
| Fall Time | tf | 11 | 17 | ns | ID ≅ -1.0 A, VGEN = -10 V, VDD = -50 V, RL = 75 Ω, Rg = 6 Ω | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 90 | 135 | nC | IF = 0.5 A, dI/dt = 100 A/µs | 2 | |
| Maximum Junction-to-Ambient, t ≤ 5 s | RthJA | 75 | 100 | °C/W | t ≤ 5 s | 1 | |
| Maximum Junction-to-Ambient, steady state | RthJA | 120 | 166 | °C/W | steady state | 1 | |
| Maximum Junction-to-Foot (Drain), steady state | RthJF | 40 | 50 | °C/W | steady state | 1 |
CAD (KiCad official)
- Symbol:
PMV240SPR-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
pmv240spr-vb-etched.step/pmv240spr-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pmv240spr-vb.step/pmv240spr-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
45b82d05dba17ac4, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PMV240SPR-VB
**VBsemi Elec** · MOSFETs · SOT-23
PMV240SPR-VB from VBsemi Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated ±20 V per the absolute maximum ratings. |
| 2 | S | passive | Source terminal; continuous source current (diode conduction) is rated −1.4 A for 5 s and −1.0 A in steady state. |
| 3 | D | passive | Drain terminal; drain-source voltage is rated −100 V and continuous drain current is rated −1.65 A (5 s) and −1.5 A (steady state) at TA = 25 °C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -100 | | | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | -1.65 | | | A | TA = 25 °C, 5 s, TJ = 150 °C | 1 |
| Continuous Drain Current | ID | -1.5 | | | A | TA = 25 °C, steady state, TJ = 150 °C | 1 |
| Continuous Drain Current | ID | -1.55 | | | A | TA = 70 °C, 5 s, TJ = 150 °C | 1 |
| Continuous Drain Current | ID | -1.4 | | | A | TA = 70 °C, steady state, TJ = 150 °C | 1 |
| Pulsed Drain Current | IDM | -3 | | | A | | 1 |
| Continuous Source Current (Diode Conduction) | IS | -1.4 | | | A | 5 s | 1 |
| Continuous Source Current (Diode Conduction) | IS | -1 | | | A | steady state | 1 |
| Single Pulse Avalanche Current | IAS | | | 4.5 | A | L = 1.0 mH | 1 |
| Single Pulse Avalanche Energy | EAS | | | 1.01 | mJ | | 1 |
| Maximum Power Dissipation | PD | | | 2 | W | TA = 25 °C, 5 s | 1 |
| Maximum Power Dissipation | PD | | | 0.85 | W | TA = 25 °C, steady state | 1 |
| Maximum Power Dissipation | PD | | | 1 | W | TA = 70 °C, 5 s | 1 |
| Maximum Power Dissipation | PD | | | 0.58 | W | TA = 70 °C, steady state | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -100 | | | V | VGS = 0 V, ID = -250 µA | 2 |
| Gate-Threshold Voltage | VGS(th) | -1 | | -3 | V | VDS = VGS, ID = -250 µA | 2 |
| Gate-Body Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS = -100 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -10 | µA | VDS = -100 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | -1.6 | | | A | VDS ≤ -15 V, VGS = -10 V | 2 |
| Drain-Source On-Resistance | RDS(on) | | | 0.5 | Ω | VGS = -10 V, ID = -0.5 A | 2 |
| Drain-Source On-Resistance | RDS(on) | | | 0.56 | Ω | VGS = -6.0 V, ID = -0.5 A | 2 |
| Diode Forward Voltage | VSD | | 0.7 | -1.2 | V | IS = -1.0 A, VGS = 0 V | 2 |
| Total Gate Charge | Qg | | 7.7 | 12 | nC | VDS = -50 V, VGS = 10 V, ID ≅ -0.5 A | 2 |
| Turn-On Delay Time | td(on) | | 7 | 11 | ns | ID ≅ -1.0 A, VGEN = -10 V, VDD = -50 V, RL = 75 Ω, Rg = 6 Ω | 2 |
| Rise Time | tr | | 11 | 17 | ns | ID ≅ -1.0 A, VGEN = -10 V, VDD = -50 V, RL = 75 Ω, Rg = 6 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 16 | 25 | ns | ID ≅ -1.0 A, VGEN = -10 V, VDD = -50 V, RL = 75 Ω, Rg = 6 Ω | 2 |
| Fall Time | tf | | 11 | 17 | ns | ID ≅ -1.0 A, VGEN = -10 V, VDD = -50 V, RL = 75 Ω, Rg = 6 Ω | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 90 | 135 | nC | IF = 0.5 A, dI/dt = 100 A/µs | 2 |
| Maximum Junction-to-Ambient, t ≤ 5 s | RthJA | | 75 | 100 | °C/W | t ≤ 5 s | 1 |
| Maximum Junction-to-Ambient, steady state | RthJA | | 120 | 166 | °C/W | steady state | 1 |
| Maximum Junction-to-Foot (Drain), steady state | RthJF | | 40 | 50 | °C/W | steady state | 1 |
## CAD (KiCad official)
- Symbol: `PMV240SPR-VB`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `pmv240spr-vb-etched.step` / `pmv240spr-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pmv240spr-vb.step` / `pmv240spr-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/pmv240spr-vb-datasheet.pdf) (8 pp, sha256 `45b82d05dba17ac4`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/pmv240spr-vb-datasheet.pdf)