component
PMV230ENEAR
Public Made by Adomby adom
Nexperia MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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PMV230ENEAR
Nexperia · MOSFETs · SOT-23
PMV230ENEAR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the MOSFET; gate-source voltage is limited to -20 V to 20 V (VGS, Tj = 25 °C). |
| 2 | S | passive | Source of the MOSFET; source current is limited to 0.8 A at Tamb = 25 °C (IS). |
| 3 | D | passive | Drain of the MOSFET; drain-source voltage is limited to 60 V and continuous drain current to 1.5 A at Tamb = 25 °C (VGS = 10 V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 60 | V | 3 | |||
| Gate-source voltage | VGS | -20 | 20 | V | Tj = 25 °C | 3 | |
| Drain current | ID | 1.5 | A | VGS = 10 V; Tamb = 25 °C [1] | 3 | ||
| Drain current | ID | 0.9 | A | VGS = 10 V; Tamb = 100 °C [1] | 3 | ||
| Peak drain current | IDM | 5.9 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 | ||
| Non-repetitive drain-source avalanche energy | EDS(AL)S | 6 | mJ | Tj(init) = 25 °C; ID = 0.14 A; DUT in avalanche (unclamped) | 3 | ||
| Total power dissipation | Ptot | 480 | mW | Tamb = 25 °C [2] | 3 | ||
| Total power dissipation | Ptot | 950 | mW | Tamb = 25 °C [1] | 3 | ||
| Total power dissipation | Ptot | 1.45 | W | Tsp = 25 °C | 3 | ||
| Junction temperature | Tj | -55 | 150 | °C | 3 | ||
| Ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Source current | IS | 0.8 | A | Tamb = 25 °C [1] | 3 | ||
| Electrostatic discharge voltage | VESD | 2000 | V | HBM [3] | 3 | ||
| Thermal resistance from junction to ambient | Rth(j-a) | 227 | 261 | K/W | in free air [1] | 5 | |
| Thermal resistance from junction to ambient | Rth(j-a) | 114 | 131 | K/W | in free air [2] | 5 | |
| Thermal resistance from junction to solder point | Rth(j-sp) | 20 | 23 | K/W | 5 | ||
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | ID = 250 µA; VGS = 0 V; Tj = 25 °C | 6 | ||
| Gate-source threshold voltage | VGSth | 1.3 | 1.7 | 2.7 | V | ID = 250 µA; VDS=VGS; Tj = 25 °C | 6 |
| Drain leakage current | IDSS | 1 | µA | VDS = 60 V; VGS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | 10 | µA | VGS = 20 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | -10 | µA | VGS = -20 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | 1 | µA | VGS = 10 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | -1 | µA | VGS = -10 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Drain-source on-state resistance | RDSon | 176 | 222 | mΩ | VGS = 10 V; ID = 1.5 A; Tj = 25 °C | 6 | |
| Drain-source on-state resistance | RDSon | 332 | 441 | mΩ | VGS = 10 V; ID = 1.5 A; Tj = 150 °C | 6 | |
| Drain-source on-state resistance | RDSon | 196 | 262 | mΩ | VGS = 4.5 V; ID = 1.4 A; Tj = 25 °C | 6 | |
| Total gate charge | QG(tot) | 3.9 | 4.8 | nC | VDS = 30 V; ID = 1.5 A; VGS = 10 V; Tj = 25 °C | 6 | |
| Source-drain voltage | VSD | 0.8 | 1.2 | V | IS = 0.8 A; VGS = 0 V; Tj = 25 °C | 6 |
CAD (KiCad official)
- Symbol:
PMV230ENEAR - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
pmv230enear-etched.step/pmv230enear-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pmv230enear.step/pmv230enear.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (16 pp, sha256
b59743c9054b4f48, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PMV230ENEAR
**Nexperia** · MOSFETs · SOT-23
PMV230ENEAR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the MOSFET; gate-source voltage is limited to -20 V to 20 V (VGS, Tj = 25 °C). |
| 2 | S | passive | Source of the MOSFET; source current is limited to 0.8 A at Tamb = 25 °C (IS). |
| 3 | D | passive | Drain of the MOSFET; drain-source voltage is limited to 60 V and continuous drain current to 1.5 A at Tamb = 25 °C (VGS = 10 V). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | | | 60 | V | | 3 |
| Gate-source voltage | VGS | -20 | | 20 | V | Tj = 25 °C | 3 |
| Drain current | ID | | | 1.5 | A | VGS = 10 V; Tamb = 25 °C [1] | 3 |
| Drain current | ID | | | 0.9 | A | VGS = 10 V; Tamb = 100 °C [1] | 3 |
| Peak drain current | IDM | | | 5.9 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 |
| Non-repetitive drain-source avalanche energy | EDS(AL)S | | | 6 | mJ | Tj(init) = 25 °C; ID = 0.14 A; DUT in avalanche (unclamped) | 3 |
| Total power dissipation | Ptot | | | 480 | mW | Tamb = 25 °C [2] | 3 |
| Total power dissipation | Ptot | | | 950 | mW | Tamb = 25 °C [1] | 3 |
| Total power dissipation | Ptot | | | 1.45 | W | Tsp = 25 °C | 3 |
| Junction temperature | Tj | -55 | | 150 | °C | | 3 |
| Ambient temperature | Tamb | -55 | | 150 | °C | | 3 |
| Storage temperature | Tstg | -65 | | 150 | °C | | 3 |
| Source current | IS | | | 0.8 | A | Tamb = 25 °C [1] | 3 |
| Electrostatic discharge voltage | VESD | | | 2000 | V | HBM [3] | 3 |
| Thermal resistance from junction to ambient | Rth(j-a) | | 227 | 261 | K/W | in free air [1] | 5 |
| Thermal resistance from junction to ambient | Rth(j-a) | | 114 | 131 | K/W | in free air [2] | 5 |
| Thermal resistance from junction to solder point | Rth(j-sp) | | 20 | 23 | K/W | | 5 |
| Drain-source breakdown voltage | V(BR)DSS | 60 | | | V | ID = 250 µA; VGS = 0 V; Tj = 25 °C | 6 |
| Gate-source threshold voltage | VGSth | 1.3 | 1.7 | 2.7 | V | ID = 250 µA; VDS=VGS; Tj = 25 °C | 6 |
| Drain leakage current | IDSS | | | 1 | µA | VDS = 60 V; VGS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS | | | 10 | µA | VGS = 20 V; VDS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS | -10 | | | µA | VGS = -20 V; VDS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS | | | 1 | µA | VGS = 10 V; VDS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS | -1 | | | µA | VGS = -10 V; VDS = 0 V; Tj = 25 °C | 6 |
| Drain-source on-state resistance | RDSon | | 176 | 222 | mΩ | VGS = 10 V; ID = 1.5 A; Tj = 25 °C | 6 |
| Drain-source on-state resistance | RDSon | | 332 | 441 | mΩ | VGS = 10 V; ID = 1.5 A; Tj = 150 °C | 6 |
| Drain-source on-state resistance | RDSon | | 196 | 262 | mΩ | VGS = 4.5 V; ID = 1.4 A; Tj = 25 °C | 6 |
| Total gate charge | QG(tot) | | 3.9 | 4.8 | nC | VDS = 30 V; ID = 1.5 A; VGS = 10 V; Tj = 25 °C | 6 |
| Source-drain voltage | VSD | | 0.8 | 1.2 | V | IS = 0.8 A; VGS = 0 V; Tj = 25 °C | 6 |
## CAD (KiCad official)
- Symbol: `PMV230ENEAR`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `pmv230enear-etched.step` / `pmv230enear-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pmv230enear.step` / `pmv230enear.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588885368985038848) (16 pp, sha256 `b59743c9054b4f48`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/pmv230enear-datasheet.pdf)