component

PMV16XNR-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PMV16XNR-HXY

HXY MOSFET · MOSFETs · SOT-23

PMV16XNR-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET, rated for a gate-source voltage of ±12 V.
2 D passive Drain terminal of the N-channel MOSFET, rated for a drain-source voltage of 20 V with 7 A continuous drain current.
3 S passive Source terminal of the N-channel MOSFET, the reference for the gate-source voltage rated at ±12 V.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Drain Current-Continuous ID 7 A 1
Drain Current-Pulsed IDM 32 A Note 1 1
Maximum Power Dissipation PD 2 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 120 ℃/W Note 2 1
Drain-Source Breakdown Voltage V(BR)DSS 20 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=20V, VGS=0V, 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS =±12V 2
Gate Threshold Voltage VGS(th) 0.5 0.75 1.2 V VDS=VGS, ID=250μA 2
Maximum Continuous Drain to Source Diode Forward Current IS 7.5 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 32 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=8A 2
Static Drain-Source on-Resistance RDS(on) 15 mΩ VGS=4.5V, ID=7A 2
Static Drain-Source on-Resistance RDS(on) 19 mΩ VGS=2.5V, ID=5A 2
Input Capacitance Ciss 700 pF VDS=10V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 132 pF 2
Reverse Transfer Capacitance Crss 114 pF 2
Total Gate Charge Qg 15 nC VDS=10V, ID=4A, VGS=4.5V 2
Gate-Source Charge Qgs 2 nC 2
Gate-Drain (Miller) Charge Qgd 5.2 nC 2
Turn-on Delay Time td(on) 9 ns VDS=10V, ID=4A, RGEN=3Ω, VGS=4.5V 2
Turn-on Rise Time tr 25 ns 2
Turn-off Delay Time td(off) 37 ns 2
Turn-off Fall Time tf 14 ns 2

CAD (KiCad official)

  • Symbol: PMV16XNR-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pmv16xnr-hxy-etched.step / pmv16xnr-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmv16xnr-hxy.step / pmv16xnr-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 b0314f654ef56275, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF