component
PMV100XPEAR
Public Made by Adomby adom
Nexperia MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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pmv100xpear: specified limits as data (metadata.characteristics, 29 rows from the datasheet)
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17d ago
PMV100XPEAR
Nexperia · MOSFETs · SOT-23
PMV100XPEAR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; the gate-source voltage VGS is limited to -12 V to 12 V (Tj = 25 °C). |
| 2 | S | passive | Source of the MOSFET; the source current IS is limited to -1 A at Tamb = 25 °C. |
| 3 | D | passive | Drain of the MOSFET; the drain-source voltage VDS is limited to -20 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | -20 | V | 3 | |||
| Gate-source voltage | VGS | -12 | 12 | V | Tj = 25 °C | 3 | |
| Drain current | ID | -2.4 | A | VGS = -4.5 V; Tamb = 25 °C | 3 | ||
| Drain current | ID | -1.5 | A | VGS = -4.5 V; Tamb = 100 °C | 3 | ||
| Peak drain current | IDM | -10 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 | ||
| Non-repetitive drain-source avalanche energy | EDS(AL)S | 5 | mJ | Tj(init) = 25 °C; ID = -0.5 A; DUT in avalanche (unclamped) | 3 | ||
| Total power dissipation | Ptot | 463 | mW | Tamb = 25 °C [2]; FR4 PCB, single-sided copper, standard footprint | 3 | ||
| Total power dissipation | Ptot | 1.06 | W | [1] FR4 PCB, single-sided copper, mounting pad for drain 6 cm2 | 3 | ||
| Total power dissipation | Ptot | 4.45 | W | Tsp = 25 °C | 3 | ||
| Junction temperature | Tj | -55 | 150 | °C | 3 | ||
| Ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Source current | IS | -1 | A | Tamb = 25 °C [1] | 3 | ||
| Electrostatic discharge voltage | VESD | 2000 | V | HBM; measured between all pins [3] | 3 | ||
| Thermal resistance from junction to ambient | Rth(j-a) | 226 | 270 | K/W | in free air; [1] FR4 PCB, single-sided copper, tin-plated and standard footprint | 5 | |
| Thermal resistance from junction to ambient | Rth(j-a) | 98 | 118 | K/W | in free air; [2] FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2 | 5 | |
| Thermal resistance from junction to solder point | Rth(j-sp) | 20 | 28 | K/W | 5 | ||
| Drain-source breakdown voltage | V(BR)DSS | -20 | V | ID = -250 µA; VGS = 0 V; Tj = 25 °C | 6 | ||
| Gate-source threshold voltage | VGSth | -0.75 | -1 | -1.25 | V | ID = -250 µA; VDS = VGS; Tj = 25 °C | 6 |
| Drain leakage current | IDSS | -1 | µA | VDS = -20 V; VGS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | 10 | µA | VGS = 12 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | -10 | µA | VGS = -12 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | 2 | µA | VGS = 4.5 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | -2 | µA | VGS = -4.5 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Drain-source on-state resistance | RDSon | 97 | 128 | mΩ | VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C | 6 | |
| Drain-source on-state resistance | RDSon | 142 | 187 | mΩ | VGS = -4.5 V; ID = -2.4 A; Tj = 150 °C | 6 | |
| Drain-source on-state resistance | RDSon | 147 | 210 | mΩ | VGS = -2.5 V; ID = -1.9 A; Tj = 25 °C | 6 | |
| Total gate charge | QG(tot) | 3.4 | 6 | nC | VDS = -10 V; ID = -2.4 A; VGS = -4.5 V; Tj = 25 °C | 6 | |
| Source-drain voltage | VSD | -0.7 | -1.2 | V | IS = -1 A; VGS = 0 V; Tj = 25 °C | 6 |
CAD (KiCad official)
- Symbol:
PMV100XPEAR - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
pmv100xpear-etched.step/pmv100xpear-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pmv100xpear.step/pmv100xpear.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (15 pp, sha256
ad02970ae2a84ef6, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PMV100XPEAR
**Nexperia** · MOSFETs · SOT-23
PMV100XPEAR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; the gate-source voltage VGS is limited to -12 V to 12 V (Tj = 25 °C). |
| 2 | S | passive | Source of the MOSFET; the source current IS is limited to -1 A at Tamb = 25 °C. |
| 3 | D | passive | Drain of the MOSFET; the drain-source voltage VDS is limited to -20 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | | | -20 | V | | 3 |
| Gate-source voltage | VGS | -12 | | 12 | V | Tj = 25 °C | 3 |
| Drain current | ID | | | -2.4 | A | VGS = -4.5 V; Tamb = 25 °C | 3 |
| Drain current | ID | | | -1.5 | A | VGS = -4.5 V; Tamb = 100 °C | 3 |
| Peak drain current | IDM | | | -10 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 |
| Non-repetitive drain-source avalanche energy | EDS(AL)S | | | 5 | mJ | Tj(init) = 25 °C; ID = -0.5 A; DUT in avalanche (unclamped) | 3 |
| Total power dissipation | Ptot | | | 463 | mW | Tamb = 25 °C [2]; FR4 PCB, single-sided copper, standard footprint | 3 |
| Total power dissipation | Ptot | | | 1.06 | W | [1] FR4 PCB, single-sided copper, mounting pad for drain 6 cm2 | 3 |
| Total power dissipation | Ptot | | | 4.45 | W | Tsp = 25 °C | 3 |
| Junction temperature | Tj | -55 | | 150 | °C | | 3 |
| Ambient temperature | Tamb | -55 | | 150 | °C | | 3 |
| Storage temperature | Tstg | -65 | | 150 | °C | | 3 |
| Source current | IS | | | -1 | A | Tamb = 25 °C [1] | 3 |
| Electrostatic discharge voltage | VESD | | | 2000 | V | HBM; measured between all pins [3] | 3 |
| Thermal resistance from junction to ambient | Rth(j-a) | | 226 | 270 | K/W | in free air; [1] FR4 PCB, single-sided copper, tin-plated and standard footprint | 5 |
| Thermal resistance from junction to ambient | Rth(j-a) | | 98 | 118 | K/W | in free air; [2] FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2 | 5 |
| Thermal resistance from junction to solder point | Rth(j-sp) | | 20 | 28 | K/W | | 5 |
| Drain-source breakdown voltage | V(BR)DSS | -20 | | | V | ID = -250 µA; VGS = 0 V; Tj = 25 °C | 6 |
| Gate-source threshold voltage | VGSth | -0.75 | -1 | -1.25 | V | ID = -250 µA; VDS = VGS; Tj = 25 °C | 6 |
| Drain leakage current | IDSS | | | -1 | µA | VDS = -20 V; VGS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS | | | 10 | µA | VGS = 12 V; VDS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS | | | -10 | µA | VGS = -12 V; VDS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS | | | 2 | µA | VGS = 4.5 V; VDS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS | | | -2 | µA | VGS = -4.5 V; VDS = 0 V; Tj = 25 °C | 6 |
| Drain-source on-state resistance | RDSon | | 97 | 128 | mΩ | VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C | 6 |
| Drain-source on-state resistance | RDSon | | 142 | 187 | mΩ | VGS = -4.5 V; ID = -2.4 A; Tj = 150 °C | 6 |
| Drain-source on-state resistance | RDSon | | 147 | 210 | mΩ | VGS = -2.5 V; ID = -1.9 A; Tj = 25 °C | 6 |
| Total gate charge | QG(tot) | | 3.4 | 6 | nC | VDS = -10 V; ID = -2.4 A; VGS = -4.5 V; Tj = 25 °C | 6 |
| Source-drain voltage | VSD | | -0.7 | -1.2 | V | IS = -1 A; VGS = 0 V; Tj = 25 °C | 6 |
## CAD (KiCad official)
- Symbol: `PMV100XPEAR`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `pmv100xpear-etched.step` / `pmv100xpear-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pmv100xpear.step` / `pmv100xpear.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588885366266454016) (15 pp, sha256 `ad02970ae2a84ef6`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/pmv100xpear-datasheet.pdf)